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quality Electronic Component CYSTECH MTB340N11N6 N Channel MOSFET with Low On Resistance and Compact Outline factory
quality Electronic Component CYSTECH MTB340N11N6 N Channel MOSFET with Low On Resistance and Compact Outline factory

Electronic Component CYSTECH MTB340N11N6 N Channel MOSFET with Low On Resistance and Compact Outline

Key Attributes
Model Number: MTB340N11N6
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
430mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
21pF
Input Capacitance(Ciss):
496pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
9.3nC@10V
Mfr. Part #:
MTB340N11N6
Package:
SOT-26
Product Description

Product Overview

The MTB340N11N6 is a preliminary N-Channel Enhancement Mode MOSFET from CYStech Electronics Corp. It features simple drive requirements, low on-resistance, and a small package outline, making it suitable for various electronic applications. The device is Pb-free lead plating and halogen-free.

Product Attributes

  • Brand: CYStech Electronics Corp.
  • Origin: Taiwan (implied by manufacturer)
  • Material: Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Lead: Pure tin plated.
  • Certifications: Pb-free lead plating, halogen-free package

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Conditions
Drain-Source VoltageBVDSS110--VVGS=0V, ID=250A
Gate-Source VoltageVGS---V
Continuous Drain CurrentID---ATC=25 C 1.9; TC=70 C 1.5; TA=25 C (Note 1) 1.5; TA=70 C (Note 1) 1.2
Pulsed Drain CurrentIDM--6A(Note 2, 3)
Total Power DissipationPD---WTC=25 C 3.1; TC=70 C 2.0; TA=25 C 2; TA=70 C 1.25
Operating Junction Temperature and Storage Temperature RangeTj, Tstg-55-+150C
Thermal Resistance, Junction-to-case, maxRJC-40-C/W
Thermal Resistance, Junction-to-ambient, maxRJA-62.5-C/W(Note 1)
Gate-Source Threshold VoltageVGS(th)1-2.5VVDS=VGS, ID=250A
Gate Leakage CurrentIGSS--100nAVGS=20V, VDS=0V
Drain Leakage CurrentIDSS--1AVDS=90V, VGS=0V, Tj=25; 10 A VDS=90V, VGS=0V, Tj=55
Static Drain-Source On-State ResistanceRDS(ON)-340430mID=1.5A, VGS=10V; * 355 460 m ID=1.0A, VGS=4.5V
Forward Transfer AdmittanceGFS-2.6-SVDS=10V, ID=1A
Input CapacitanceCiss-496-pFVDS=25V, VGS=0V, f=1MHz
Output CapacitanceCoss-21-pFVDS=25V, VGS=0V, f=1MHz
Reverse Transfer CapacitanceCrss-16-pFVDS=25V, VGS=0V, f=1MHz
Turn-on Delay Timetd(ON)-6.8-nsVDS=55V, ID=1A, VGS=10V, RG=6
Rise Timetr-16.2-nsVDS=55V, ID=1A, VGS=10V, RG=6
Turn-off Delay Timetd(OFF)-19.2-nsVDS=55V, ID=1A, VGS=10V, RG=6
Fall Timetf-15-nsVDS=55V, ID=1A, VGS=10V, RG=6
Total Gate ChargeQg-9.3-nCVDS=80V, ID=1.5A, VGS=10V
Gate-Source ChargeQgs-1.8-nCVDS=80V, ID=1.5A, VGS=10V
Gate-Drain ChargeQgd-1.5-nCVDS=80V, ID=1.5A, VGS=10V
Continuous Source CurrentIS--1.5A
Pulsed Source CurrentISM--6A
Source-Drain VoltageVSD-0.791.2VIS=1A,VGS=0V
Reverse Recovery Timetrr-15.6-nsIF=1A,VGS=0V, dIF/dt=100A/s
Reverse Recovery ChargeQrr-10.2-nCIF=1A,VGS=0V, dIF/dt=100A/s

2410121618_CYSTECH-MTB340N11N6_C373423.pdf

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