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quality DIODES UMC4NQ 7 Dual Complementary Pre Biased Transistor for High Reliability and Green Applications factory
quality DIODES UMC4NQ 7 Dual Complementary Pre Biased Transistor for High Reliability and Green Applications factory

DIODES UMC4NQ 7 Dual Complementary Pre Biased Transistor for High Reliability and Green Applications

Key Attributes
Model Number: UMC4NQ-7
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
47kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMC4NQ-7
Package:
SOT-353
Product Description

Product Overview

The UMC4NQ is a Dual Complementary Pre-Biased Transistor designed for ultra-small surface mount applications. It simplifies circuit design, reduces board space, and is suited for automated assembly. This device is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a "Green" device. It is also qualified to AEC-Q101 standards for high reliability and is PPAP capable.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT353
  • Material: Molded Plastic, "Green" Molding Compound
  • Flammability Classification: UL 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Plated Leads
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 Qualified, PPAP Capable

Technical Specifications

CharacteristicNPN Transistor (Q1)PNP Transistor (Q2)UnitTest Condition
Supply Voltage (VCC)50-50V@TA = +25C unless otherwise specified.
Input Voltage (VIN)-10 to +40-40 to +6V@TA = +25C unless otherwise specified.
Output Current (IO)30-100mA@TA = +25C unless otherwise specified.
Collector Current (IC)100-100mA@TA = +25C unless otherwise specified.
Power Dissipation (PD)290mW@TA = +25C (Note 6)
Thermal Resistance (RJA)430C/W@TA = +25C (Note 6)
Operating/Storage Temp (TJ, TSTG)-55 to +150C@TA = +25C unless otherwise specified.
Input Voltage (VI(OFF))0.5-0.3VVCC = 5V/ -5V, IO = 100A/-100A (Note 7/10)
Input Voltage (VI(ON))3-1.4VVO = 0.3V/ -0.3V, IO = 2mA/-1mA (Note 8/11)
Output Voltage (VO(ON))0.1 (Max)-0.1 (Typ)VIO / II = 10mA/0.5 mA (NPN), IO/ II = -5mA/-0.25 mA (PNP)
Input Current (II)0.18 (Max)-0.88 (Max)mAVI = 5V (NPN), VI = -5V (PNP)
Output Current (IO(OFF))0.5 (Max)-0.5 (Max)AVCC = 50V/ -50V, VI = 0V
DC Current Gain (GI)68 (Min)68 (Min)-VO = 5V/ -5V, IO = 5mA/-5mA
Gain-Bandwidth Product (fT)250 (Typ)MHzVCE = 10V/-10V, IE = -5mA/5mA, f = 100MHz (Note 9)
Input Resistance (R1)47 (Typ)10 (Typ)k-
Resistance Ratio (R2/R1)1 (Typ)4.7 (Typ)--

2308101604_DIODES-UMC4NQ-7_C5249276.pdf

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