40 volt NPN transistor DIODES MMBT2222A-7-F in SOT23 package for signal amplification and switching
Key Attributes
Model Number:
MMBT2222A-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2222A-7-F
Package:
SOT-23
Product Description
Product Overview
The MMBT2222A is a 40V NPN small signal transistor in a SOT23 package. It features epitaxial planar die construction, low saturation voltage (VCE(sat) < 300mV @ 150mA), and is ideal for low power amplification and switching applications. This device is totally lead-free, fully RoHS compliant, and halogen- and antimony-free, making it a "Green" device. The MMBT2222AQ-7-F variant is AEC-Q101 qualified and suitable for automotive applications.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101 (MMBT2222AQ-7-F), PPAP capable (MMBT2222AQ-7-F), IATF 16949 certified facilities (MMBT2222AQ-7-F)
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen- and Antimony-Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 75 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6.0 | V | |
| Collector Current | IC | 600 | mA | |
| Peak Pulse Collector Current (single pulse) | ICM | 800 | mA | |
| Peak Pulse Base Current | IBM | 200 | mA | |
| Thermal Characteristics | ||||
| Collector Power Dissipation (Note 5) | PD | 310 | mW | @ TA = +25C, on minimum recommended pad layout 1oz copper, single-sided FR-4 PCB, still air |
| Collector Power Dissipation (Note 6) | PD | 350 | mW | @ TA = +25C, on 15 mm x 15mm 1oz copper, still air |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 403 | C/W | @ TA = +25C, on minimum recommended pad layout 1oz copper, single-sided FR-4 PCB, still air |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 357 | C/W | @ TA = +25C, on 15 mm x 15mm 1oz copper, still air |
| Thermal Resistance, Junction to Leads (Note 7) | RJL | 350 | C/W | |
| Operating and Storage Temperature Range | TJ,TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class 3A |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 75 | V | IC = 100A, IE = 0 |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCEO | 40 | V | IC = 10mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6.0 | V | IE = 100A, IC = 0 |
| Collector Cut-Off Current | ICBO | 10 | nA A | VCB = 60V, IE = 0 |
| Collector Cut-Off Current | ICEX | 10 | nA | VCE = 60V, VEB(off) = 3.0V |
| Collector Cut-Off Current | ICEV | 10 | nA | VCE = 60V, VBE = 0.25V |
| Emitter Cut-Off Current | IEBO | 10 | nA | VEB = 5.0V, IC = 0 |
| Base Cut-Off Current | IBL | 20 | nA | VCE = 60V, VEB(off) = 3.0V |
| DC Current Gain | hFE | 35-300 | See graph/details | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3-1.0 | V | See graph/details |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6-2.0 | V | See graph/details |
| Output Capacitance | Cobo | 8 | pF | VCB = 10V, f = 1.0MHz, IE = 0 |
| Input Capacitance | Cibo | 25 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 |
| Transition frequency | fT | 300 | MHz | VCE = 20V, IC = 20mA, f = 100MHz |
| Noise Figure | NF | 4.0 | dB | VCE = 10V, IC = 100A, RS = 1.0k, f = 1.0kHz |
| Switching Characteristics | ||||
| Delay Time | td | 10 | ns | VCC = 30V, IC = 150mA, VBE(off) = -0.5V, IB1 = 15mA |
| Rise Time | tr | 25 | ns | VCC = 30V, IC = 150mA, IB1 = 15mA, VBE(off) = 0.5V |
| Storage Time | ts | 225 | ns | VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA |
| Fall Time | tf | 60 | ns | VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA |
2412251154_DIODES-MMBT2222A-7-F_C94515.pdf
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