0.8A Surface Mount Bridge Rectifier DIODES MB10F-13 with Lead Free Plating and RoHS Compliant Green Device
Key Attributes
Model Number:
MB10F-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
940mV@800mA
Current - Rectified:
800mA
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
MB10F-13
Package:
MBF
Product Description
MB10F - 0.8A Surface Mount Glass Passivated Bridge Rectifier
The MB10F is an advanced information new product, a 0.8A surface mount glass passivated bridge rectifier. It is suitable for AC to DC bridge full wave rectification in applications such as SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a miniature package for space saving, reliable robust construction, suitability for SMT manufacturing, and a low forward voltage drop. This device is lead-free, RoHS compliant, and halogen and antimony free, qualifying it as a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Case Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead Free Plating (Matte Tin Finish), Solderable per MIL-STD-202, Method 208
- Polarity: As Marked on Body
- Weight: 0.08 grams (Approximate)
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 1000 | V | |
| RMS Reverse Voltage | VR(RMS) | 700 | V | |
| Average Rectified Output Current | IO | 0.8 | A | @TA = +25C |
| Average Rectified Output Current | IO | 0.5 | A | @TA = +125C |
| Non-Repetitive Peak Forward Surge Current (8.3ms Single Half Sine-Wave) | IFSM | 30 | A | |
| I2t Rating for Fusing (1ms < t < 8.3ms) | I2t | 3.74 | AS | |
| Reverse Breakdown Voltage | V(BR)R | 1000 | V | IR = 5A |
| Forward Voltage (Per Element) | VF | 1.1 | V | IF = 0.8A, TA = +25C |
| Leakage Current (Per Element) | IR | 5 | A | VR = 1,000V, TA = +25C |
| Leakage Current (Per Element) | IR | 500 | A | VR = 1,000V, TA = +125C |
| Total Capacitance (Per Element) | CT | 8 | pF | VR = 4V, f = 1.0MHz |
| Typical Thermal Resistance, Junction to Ambient (Per Element) | RJA | 63 | C/W | Note 6 |
| Typical Thermal Resistance, Junction to Lead (Per Element) | RJL | 39 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
2009081538_DIODES-MB10F-13_C780855.pdf
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