NPN Bipolar Junction Transistor Diodes BC817-25Q-7-F Designed for Automotive and Amplifier Performance
Product Overview
The BC817-16Q/-25Q/-40Q is a 45V NPN small signal bipolar junction transistor (BJT) designed to meet the stringent requirements of automotive applications. It is ideally suited for automatic insertion and is constructed with an epitaxial planar die. This transistor is suitable for switching and AF amplifier applications.
Product Attributes
- Brand: Diodes Incorporated
- Origin: Epitaxial Planar Die Construction
- Material: Molded Plastic, Green Molding Compound
- Color: "Green" Device
- Certifications: AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Totally Lead-Free & Fully RoHS Compliant. Halogen and Antimony Free.
Technical Specifications
| Characteristic | Symbol | BC817-16Q | BC817-25Q | BC817-40Q | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 100A | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 10mA | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IC = 100A | ||
| Collector-Emitter Cut-Off Current | ICES | 100 / 5.0 | nA / A | VCE = 45V / VCE = 25V, TJ = +150C | ||
| Emitter-Base Cut-Off Current | IEBO | 100 | nA | VEB = 5.0V | ||
| DC Current Gain | hFE | 100-160 | 160-250 | 250-400 | VCE = 1.0V, IC = 100mA | |
| 250-400 | 400-600 | 600- | ||||
| DC Current Gain | hFE | 60-100 | 100-170 | 170- | VCE = 1.0V, IC = 300mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | V | IC = 500mA, IB = 50mA | ||
| Base-Emitter Voltage | VBE | 1.2 | V | VCE = 1.0V, IC = 300mA | ||
| Transition Frequency | fT | 100 | MHz | VCE = 5.0V, IC = 10mA, f = 50MHz | ||
| Collector-Base Capacitance | CCBO | 12 | pF | VCB = 10V, f = 1.0MHz |
2201131130_DIODES-BC817-25Q-7-F_C559579.pdf
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