NPN Bipolar Junction Transistor Diodes BC817-25Q-7-F Designed for Automotive and Amplifier Performance

Key Attributes
Model Number: BC817-25Q-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817-25Q-7-F
Package:
SOT-23
Product Description

Product Overview

The BC817-16Q/-25Q/-40Q is a 45V NPN small signal bipolar junction transistor (BJT) designed to meet the stringent requirements of automotive applications. It is ideally suited for automatic insertion and is constructed with an epitaxial planar die. This transistor is suitable for switching and AF amplifier applications.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Epitaxial Planar Die Construction
  • Material: Molded Plastic, Green Molding Compound
  • Color: "Green" Device
  • Certifications: AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Totally Lead-Free & Fully RoHS Compliant. Halogen and Antimony Free.

Technical Specifications

CharacteristicSymbolBC817-16QBC817-25QBC817-40QUnitTest Condition
Collector-Base Breakdown VoltageBVCBO50VIC = 100A
Collector-Emitter Breakdown VoltageBVCEO45VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO5VIC = 100A
Collector-Emitter Cut-Off CurrentICES100 / 5.0nA / AVCE = 45V / VCE = 25V, TJ = +150C
Emitter-Base Cut-Off CurrentIEBO100nAVEB = 5.0V
DC Current GainhFE100-160160-250250-400VCE = 1.0V, IC = 100mA
250-400400-600600-
DC Current GainhFE60-100100-170170-VCE = 1.0V, IC = 300mA
Collector-Emitter Saturation VoltageVCE(sat)0.7VIC = 500mA, IB = 50mA
Base-Emitter VoltageVBE1.2VVCE = 1.0V, IC = 300mA
Transition FrequencyfT100MHzVCE = 5.0V, IC = 10mA, f = 50MHz
Collector-Base CapacitanceCCBO12pFVCB = 10V, f = 1.0MHz

2201131130_DIODES-BC817-25Q-7-F_C559579.pdf

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