Compact thin profile DIODES TT410-13 bridge rectifier designed for AC to DC full wave rectification
Key Attributes
Model Number:
TT410-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
240A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
910mV@2A
Current - Rectified:
4A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
TT410-13
Package:
TT
Product Description
Product Overview
The TT410 is an advanced information bridge rectifier featuring glass-passivated die construction and a compact, thin profile package. It offers a low forward voltage drop for improved power efficiency and high current and surge capability. This rectifier is suitable for AC to DC full wave rectification in applications such as SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. It is designed for SMT manufacturing and is lead-free, RoHS compliant, and halogen and antimony free ('Green' device).
Product Attributes
- Brand: Diodes Incorporated
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead Free Plating (Matte Tin Finish)
- Certifications: RoHS Compliant, Halogen and Antimony Free ('Green' Device)
- Compliance: Commercial
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V | |
| Working Peak Reverse Voltage | VRWM | 1000 | V | |
| DC Blocking Voltage | VR | 1000 | V | |
| RMS Reverse Voltage | VR(RMS) | 700 | V | |
| Average Rectified Output Current | IO | 4.0 | A | @ TA = +25C (Note 5) |
| Non-Repetitive Peak Forward Surge Current (8.3ms) | IFSM | 120 | A | Single Half Sine-Wave Superimposed on Rated Load |
| Non-Repetitive Peak Forward Surge Current (1.0ms) | IFSM | 240 | A | Single Half Sine-Wave Superimposed on Rated Load |
| I2t Rating for Fusing (1ms < t < 8.3ms) | I2t | 59 | A2S | |
| Typical Thermal Resistance, Junction to Ambient | RJA | 13 | C/W | Per Element (Note 5) |
| Typical Thermal Resistance, Junction to Lead | RJL | 8 | C/W | Per Element |
| Typical Thermal Resistance, Junction to Case | RJC | 3 | C/W | Per Element |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Reverse Breakdown Voltage | V(BR)R | 1000 | V | IR = 10A (Note 6) |
| Forward Voltage (Typ.) | VF | 0.80 | V | IF=2A, TA = +25C |
| Forward Voltage (Max.) | VF | 1.0 | V | IF = 2A, TA = +25C |
| Forward Voltage (Typ.) | VF | 0.91 | V | IF=2A, TA = +125C |
| Leakage Current (Typ.) | IR | 0.15 | A | VR = 1,000V, TA = +25C (Note 6) |
| Leakage Current (Max.) | IR | 5 | A | VR = 1,000V, TA = +25C (Note 6) |
| Leakage Current (Typ.) | IR | 55 | A | VR = 1,000V, TA = +125C (Note 6) |
| Leakage Current (Max.) | IR | 500 | A | VR = 1,000V, TA = +125C (Note 6) |
| Total Capacitance (Typ.) | CT | 40 | pF | VR = 4V, f = 1.0MHz (Per Element) |
2412251058_DIODES-TT410-13_C460263.pdf
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