SOT223 Package DIODES ZX5T1951GTA 60V PNP Transistor with Continuous Collector Current and High Gain
Key Attributes
Model Number:
ZX5T1951GTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
120MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZX5T1951GTA
Package:
SOT-223
Product Description
Product Overview
The ZX5T1951G is a 60V PNP medium power transistor in a SOT223 package. It offers a continuous collector current of -6A, low saturation voltage (< -95mV max @ -1A), and an equivalent on-resistance of 40m. The device features high gain hold-up specified up to -10A and is qualified to AEC-Q101 standards for high reliability. It is also lead-free, RoHS compliant, and halogen/antimony-free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: RoHS Compliant, AEC-Q101 Standards
- Color: "Green" Device
- Origin: Diodes Incorporated
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -90 | V | |
| Collector-Emitter Voltage | VCES | -90 | V | |
| Collector-Emitter Voltage | VCEO | -60 | V | |
| Emitter-Base Voltage | VEBO | -7 | V | |
| Continuous Collector Current | IC | -6 | A | @TA = +25C, Note 5 |
| Peak Pulse Current | ICM | -15 | A | |
| Base Current | IB | -1 | A | |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 3.0 | W | @TA = +25C, Note 5 |
| Linear Derating Factor | 24 | mW /C | (Note 5) | |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | (Note 5) |
| Thermal Resistance Junction to Lead | RJL | 12.3 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -90 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCES | -90 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | V | IC = -10mA, Note 9 |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector-Base Cut-Off Current | ICBO | <1 | nA | VCB = -72V |
| Collector-Emitter Cut-Off Current | ICES | <1 | nA | VCB = -72V |
| Emitter Cutoff Current | IEBO | <1 | nA | VEB = -6V |
| Static Forward Current Transfer Ratio | hFE | 100 | - | IC = -10mA, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 100 | 300 | IC = -2A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 40 | 70 | IC = -5A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 5 | 14 | IC = -10A, VCE = -2V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -16 | mV | IC = -100mA, IB = -10mA, Note 9 |
| Collector-Emitter Saturation Voltage | VCE(sat) | -95 | mV | IC = -1A, IB = -100mA, Note 9 |
| Collector-Emitter Saturation Voltage | VCE(sat) | -260 | mV | IC = -5A, IB = -500mA, Note 9 |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.15 | V | IC = -5A, IB = -500mA, Note 9 |
| Base-Emitter Turn-On Voltage | VBE(on) | -1.0 | V | IC = -5A, VCE = -2V, Note 9 |
| Output Capacitance | Cobo | 70 | pF | VCB = -10V, f = 1MHz, Note 9 |
| Transition Frequency | fT | 120 | MHz | VCE = -10V, IC = -100mA, f = 50MHz, Note 9 |
| Switching Time | ton | 80 | ns | VCC = -10V, IC = -2A, IB1 = -IB2 = -200mA, Note 9 |
| Switching Time | toff | 300 | ns | VCC = -10V, IC = -2A, IB1 = -IB2 = -200mA, Note 9 |
2304140030_DIODES-ZX5T1951GTA_C155516.pdf
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