PNP High Voltage Transistor DIODES FZT758TA with 400V Collector Base Breakdown Voltage SOT223 Package
Key Attributes
Model Number:
FZT758TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.6W
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT758TA
Package:
SOT-223
Product Description
Product Overview
The FZT758 is a 400V PNP high voltage transistor in a SOT223 package. It offers a high continuous collector current of -500mA and a peak pulse current of -1A, with a low saturation voltage of less than -250mV at -50mA. This device features high current gain hold-up, with hFE greater than 40 specified up to -200mA. It is a complementary NPN type to the FZT658. The FZT758 is lead-free, RoHS compliant, and halogen and antimony free, making it a "Green" device. It is suitable for applications requiring specific change control, such as automotive applications qualified to AEC-Q100/101/200 standards.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Rating: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Plated Leads
- Weight: 0.112 grams (Approximate)
- Compliance: Lead-Free Finish; RoHS Compliant; Halogen and Antimony Free. Green Device
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | -400 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -400 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cut-Off Current | ICBO | -100 | nA | VCB = -320V |
| Collector Cut-Off Current | ICES | -100 | nA | VCE = -320V |
| Emitter Cut-Off Current | IEBO | -20 | nA | VEB = -6V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.30 | V | IC = -20mA, IB = -1mA |
| -0.25 | IC = -50mA, IB = -5mA | |||
| -0.50 | IC = -100mA, IB = -10mA | |||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC = -100mA, IB = -10mA |
| Base-Emitter Turn-On Voltage | VBE(on) | -1.0 | V | IC = -100mA, VCE = -5V |
| DC Current Gain | hFE | 50 | IC = -1mA, VCE = -5V | |
| 50 | IC = -100mA, VCE = -5V | |||
| 40 | IC = -200mA, VCE = -10V | |||
| Current Gain-Bandwidth Product | fT | 50 | MHz | VCE = -20V, IC = -20mA, f = 20MHz |
| Output Capacitance | Cobo | 20 | pF | VCB = -20V, f = 1MHz |
| Switching Time (Turn-on) | ton | 140 | ns | IC = -100mA, VCC = -100V, IB1 = -10mA, IB2 = 20mA |
| Switching Time (Turn-off) | toff | 2,000 | ns | IC = -100mA, VCC = -100V, IB1 = -10mA, IB2 = 20mA |
| Power Dissipation | PD | 3.0 | W | (Note 5) Mounted on 50mm x 50mm 2oz copper FR4 PCB, still air |
| Power Dissipation | PD | 2.0 | W | (Note 6) Mounted on 25mm x 25mm 2oz copper FR4 PCB, still air |
| Power Dissipation | PD | 1.6 | W | (Note 7) Mounted on 25mm x 25mm 1oz copper FR4 PCB, still air |
| Power Dissipation | PD | 1.2 | W | (Note 8) Mounted on minimum recommended pad layout, still air |
| Thermal Resistance, Junction to Ambient | RJA | 41.7 | C/W | (Note 5) Mounted on 50mm x 50mm 2oz copper FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | C/W | (Note 6) Mounted on 25mm x 25mm 2oz copper FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient | RJA | 78.1 | C/W | (Note 7) Mounted on 25mm x 25mm 1oz copper FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient | RJA | 104 | C/W | (Note 8) Mounted on minimum recommended pad layout, still air |
| Thermal Resistance Junction to Lead | RJL | 12.9 | C/W | (Note 9) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge (Human Body Model) | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge (Machine Model) | ESD MM | 400 | V | JEDEC Class C |
2412251154_DIODES-FZT758TA_C99123.pdf
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