160V NPN Transistor Diodes DXT5551P5-13 PowerDI5 Package Molded Plastic Green Molding Compound Device
Key Attributes
Model Number:
DXT5551P5-13
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
2.25W
Transition Frequency(fT):
130MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
DXT5551P5-13
Package:
PowerDI-5
Product Description
Product Overview
The DXT5551P5 is a 160V NPN high voltage transistor designed for high reliability applications. It offers significant size reduction compared to traditional packages like SOT223 and TO252, with a maximum height of just 1.1mm. This device is rated up to 2.25W and features a high collector-emitter breakdown voltage of 160V, making it suitable for demanding applications.
Product Attributes
- Brand: Diodes Incorporated
- Package Type: PowerDI5
- Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
- Certifications: AEC-Q101 Standards Qualified, Lead Free, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 180 | V | |
| Collector-Emitter Voltage | VCEO | 160 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Continuous Collector Current | IC | 600 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 4) | PD | 2.25 | W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm) |
| Thermal Resistance, Junction to Ambient Air (Note 4) | RJA | 55.5 | C/W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm) |
| Power Dissipation (Note 5) | PD | 1.28 | W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm) |
| Thermal Resistance, Junction to Ambient Air (Note 5) | RJA | 97.4 | C/W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm) |
| Power Dissipation (Note 6) | PD | 0.7 | W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout) |
| Thermal Resistance, Junction to Ambient Air (Note 6) | RJA | 179 | C/W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout) |
| Thermal Resistance, Junction to Collector Terminal | RJT | 30 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 180 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 7) | BVCEO | 160 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 6.0 | V | IE = 10A |
| Collector Cutoff Current | ICBO | <1 | nA | VCB = 120V |
| Collector Cutoff Current | ICBO | 50 | A | VCB = 120V, TA = 100C |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 65 | mV | IC = 10mA, IB = 1mA |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 115 | mV | IC = 50mA, IB = 5mA |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 150 | mV | IC = 100mA, IB = 10mA |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 200 | mV | IC = 200mA, IB = 20mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 760 | mV | IC = 10mA, IB = 1mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 840 | mV | IC = 50mA, IB = 5mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 1000 | mV | IC = 100mA, IB = 10mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 1200 | mV | IC = 200mA, IB = 20mA |
| DC Current Gain (Note 7) | hFE | 80 | VCE = 5V, IC = 1mA | |
| DC Current Gain (Note 7) | hFE | 130 | VCE = 5V, IC = 10mA | |
| DC Current Gain (Note 7) | hFE | 250 | VCE = 5V, IC = 50mA | |
| Transition Frequency | fT | 130 | MHz | VCE = 10V, IC = 10mA, f = 100MHz |
| Output Capacitance (Note 7) | Cobo | 6 | pF | VCB = 10V, f = 1MHz |
| Delay Time | t(d) | 95 | ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
| Rise Time | t(r) | 64 | Ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
| Storage Time | t(s) | 1256 | ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
| Fall Time | t(f) | 140 | ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
2412251117_DIODES-DXT5551P5-13_C5260571.pdf
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