DIODES S GBU806 TU LT glass passivated bridge rectifier designed for 1000V PRV and PCB applications
Key Attributes
Model Number:
S-GBU806-TU-LT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
440A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.2V@8A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
S-GBU806-TU-LT
Package:
GBU
Product Description
GBU804 thru GBU810 GLASS PASSIVATED BRIDGE RECTIFIERS
The GBU804 thru GBU810 series are high-performance glass-passivated bridge rectifiers designed for printed circuit board applications. They offer a high rating to 1000V PRV and are constructed using a reliable, low-cost molded plastic technique. The plastic material meets UL flammability classification 94V-0, and the series is UL Recognized.
Product Attributes
- Brand: SEMICONDUCTOR LITE-ON
- Material: Molded plastic
- Flammability Classification: UL 94V-0
- UL Recognition File #: E95060
- Polarity: Symbols molded on body
- Weight: 0.15 ounces, 4.0 grams
- Mounting Position: Any
Technical Specifications
| Model | Maximum Recurrent Peak Reverse Voltage (V) | Maximum RMS Voltage (V) | Maximum DC Blocking Voltage (V) | Maximum Average Forward Rectified Current (A) @TC=100 C (with heatsink) | Maximum forward Voltage at 4.0A DC (V) | Maximum forward Voltage at 8.0A DC (V) | Peak Forward Surge Current (A) 8.3ms single half sine-wave | Typical Junction Capacitance per element (pF) | Maximum DC Reverse Current (uA) @TJ =125 C | Typical Thermal Resistance (Note 2) (C/W) |
|---|---|---|---|---|---|---|---|---|---|---|
| GBU804 | 400 | 280 | 400 | 8.0 | 1.0 | 1.2 | 200 | 60 | 500 | 3.0 |
| GBU806 | 600 | 420 | 600 | 8.0 | 1.0 | 1.2 | 200 | 60 | 500 | 3.0 |
| GBU808 | 800 | 560 | 800 | 8.0 | 1.0 | 1.2 | 200 | 60 | 500 | 3.0 |
| GBU810 | 1000 | 700 | 1000 | 8.0 | 1.0 | 1.2 | 200 | 60 | 500 | 3.0 |
Operating and Storage Temperature
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Operating Temperature Range | TJ | -55 to +150 | C |
| Storage Temperature Range | TSTG | -55 to +150 | C |
Additional Specifications
| Parameter | Symbol | Rating | Unit | Condition |
|---|---|---|---|---|
| Rating for fusing (3ms t 8.3m) | I2t | 166 | A2S | |
| Peak Forward Surge Current | IFSM | 220 | A | 8.3ms single half sine-wave |
| Peak Forward Surge Current | IFSM | 440 | A | 1.0ms single half sine-wave |
| Typical Thermal Resistance (without heatsink) | R0JC | 5.6 | C/W | |
| Maximum DC Reverse Current | IR | 5.0 | uA | @TJ =25 C |
1810301817_DIODES-S-GBU806-TU-LT_C266391.pdf
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