Sensitive triac DDF BT139-800E featuring glass passivation and stable operation across temperatures
Key Attributes
Model Number:
BT139-800E
Product Custom Attributes
Mfr. Part #:
BT139-800E
Package:
TO-220
Product Description
Product Overview
The TRIAC BT139 is a sensitive TRIAC product featuring glass passivation, low gate trigger current, and high stability across operating temperatures. It is suitable for low-power AC switching applications, including fan speed and temperature modulation control, lighting control, and static switching relays.
Product Attributes
- Brand: DingDeFeng
- Origin: Shenzhen
- Model: TRIAC BT139
Technical Specifications
| Parameter | Symbol | BT139-600(D/E/F) | BT139-800(D/E/F) | Unit | Test Conditions | Min | Max |
| Repetitive Peak Off-State Voltages | VDRM, VRRM | 600 | 800 | V | |||
| RMS on-State Current | IT(RMS) | 16 | A | ||||
| Non-Repetitive Peak On-State Current | ITSM | 160 | A | ||||
| I2t for fusing | I2t | 150 | A2s | ||||
| Repetitive rate of rise of on-state current after triggering | di/dt | 50 | A/uS | ||||
| Peak gate current | IGM | 4 | A | ||||
| Peak Gate Voltage | VGM | 5 | V | ||||
| Peak Gate Power | PGM | 5 | W | ||||
| Average Gate Power | PG(AV) | 1 | W | ||||
| Operating junction temperature | TJ | -40~+125 | |||||
| Storage Temperature | TSTG | -40 ~ +150 | |||||
| Peak Repetitive Forward or Reverse Blocking Current | IDRM IRRM | uA | VAK = Rated VDRM or VRRM; | 5 | |||
| Gate Trigger Current | IGT | D: 5, E: 5, F: 5 | D: 10, E: 10, F: 10 | mA | VD=12V, RL=100 I | ||
| D: 10, E: 10, F: 10 | D: 25, E: 25, F: 25 | mA | VD=12V, RL=100 II | ||||
| D: 5, E: 5, F: 5 | D: 10, E: 10, F: 10 | mA | VD=12V, RL=100 III | ||||
| D: 10, E: 10, F: 10 | D: 25, E: 25, F: 25 | mA | VD=12V, RL=100 IV | ||||
| Gate Trigger Voltage | VGT | 1.3 | V | VD=12V, RL=100 | |||
| Gate NonTrigger Voltage | VGD | 0.2 | V | VD = VDRM, RL = 33 k, Tj = 125 C | |||
| Peak Forward On-State Voltage | VTM | 1.6 | V | IT=20A, | |||
| Latch Current | IL | D: 10, E: 20, F: 40 | D: 20, E: 40, F: 80 | mA | IG=1.2IGT I | ||
| D: 20, E: 40, F: 80 | D: 40, E: 80, F: 40 | mA | IG=1.2IGT II | ||||
| D: 10, E: 20, F: 40 | D: 20, E: 40, F: 80 | mA | IG=1.2IGT III | ||||
| D: 10, E: 20, F: 40 | D: 20, E: 40, F: 80 | mA | IG=1.2IGT IV | ||||
| Holding Current | IH | D: 10, E: 15, F: 35 | D: 10, E: 15, F: 35 | mA | IT=0.5A | ||
| Critical Rate of Rise of Off-State Voltage | dV/dt | 50 | V/s | VD=67%VDRM, TJ=25C, Gate open | |||
2509011105_DDF-BT139-800E_C50229695.pdf
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