100V NPN Transistor DIODES MJD31C-13 with 3A Collector Current and Lead Free Green Molding Compound
Product Overview
The MJD31C is a 100V NPN High Voltage Transistor designed for power switching or amplification applications. It offers a high continuous collector current of 3A and a peak pulse current of 5A. This device is complementary to the MJD32C PNP type and is available in a TO252 (DPAK) package. It is qualified to AEC-Q101 standards for high reliability and is a "Green" device, being totally lead-free and fully RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: NPN High Voltage Transistor
- Package: TO252 (DPAK)
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Complementary PNP Type: MJD32C
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC = 30mA, IB = 0 |
| Continuous Collector Current | IC | 3 | A | @TA = +25C |
| Peak Pulse Collector Current | ICM | 5 | A | @TA = +25C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.2 | V | IC = 3.0A, IB = 375mA, @TA = +25C |
| Base-Emitter Turn-On Voltage | VBE(on) | 1.8 | V | IC = 3A, VCE = 4V, @TA = +25C |
| DC Current Gain | hFE | 25 - 50 | - | VCE = 4V, IC = 1A to 3A, @TA = +25C |
| Current Gain-Bandwidth Product | fT | 3.0 | MHz | IC = 500mA, VCE = 10V, f = 1MHz |
| Power Dissipation | PD | 15 | W | @TA = +25C |
| Thermal Resistance, Junction to Ambient Air | RJA | 32 | C/W | Note 5, @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | - |
1912111437_DIODES-MJD31C-13_C435909.pdf
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