Small Signal PNP Transistor DIODES MMBT3906-7-F 40V SOT23 Package RoHS Compliant Green Device
Key Attributes
Model Number:
MMBT3906-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3906-7-F
Package:
SOT-23
Product Description
Product Overview
The MMBT3906 is a 40V PNP small signal transistor in a SOT23 package, designed for medium power amplification and switching applications. It features epitaxial planar die construction and is complementary to the MMBT3904 NPN type. This device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, making it a "Green" device. It is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Compliance: Automotive (MMBT3906Q variants)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -6.0 | V | |
| Collector Current | IC | -200 | mA | |
| Peak Collector Current | ICM | -200 | mA | |
| Peak Base Current | IBM | -100 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 6) | PD | 310 | mW | @TA = +25C, mounted on minimum recommended pad layout 1oz copper, single-sided FR4 PCB, still air |
| Power Dissipation (Note 7) | PD | 350 | mW | @TA = +25C, mounted on 15 mm 15mm 1oz copper, still air |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 403 | C/W | @TA = +25C, mounted on minimum recommended pad layout 1oz copper, single-sided FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient (Note 7) | RJA | 357 | C/W | @TA = +25C, mounted on 15 mm 15mm 1oz copper, still air |
| Thermal Resistance, Junction to Leads (Note 8) | RJL | 350 | C/W | |
| Operating and Storage Temperature Range | TJ,TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic DischargeHuman Body Model | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic DischargeMachine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -100A, IE = 0 |
| Collector-Emitter Breakdown Voltage (Note 10) | BVCEO | -40 | V | IC = -10mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | -6.0 | V | IE = -100A, IC = 0 |
| Collector Cutoff Current | ICEV | -50 | nA | VCE = -30V, VBE = 3.0V |
| Collector Cutoff Current | ICEV | -50 | nA | VCE = -30V, VBE = -0.25V |
| Emitter-Base Cutoff Current | IEBO | -50 | nA | VEB = -5V |
| DC Current Gain | hFE | 60-300 | IC = -100A to -100mA, VCE = -1.0V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 to -0.40 | V | IC = -10mA to -50mA, IB = -1.0mA to -5.0mA |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 to -0.95 | V | IC = -10mA to -50mA, IB = -1.0mA to -5.0mA |
| Output Capacitance | Cobo | 4.5 | pF | VCB = -5.0V, f = 1.0MHz, IE = 0 |
| Input Capacitance | Cibo | 10 | pF | VEB = -0.5V, f = 1.0MHz, IC = 0 |
| Input Impedance | hie | 2.0-12 | k | VCE = 10V, IC = 1.0mA, f = 1.0kHz |
| Voltage Feedback Ratio | hre | 0.1-1010-4 | VCE = 10V, IC = 1.0mA, f = 1.0kHz | |
| Small Signal Current Gain | hfe | 100-400 | VCE = 10V, IC = 1.0mA, f = 1.0kHz | |
| Output Admittance | hoe | 3.0-60 | S | VCE = 10V, IC = 1.0mA, f = 1.0kHz |
| Current Gain-Bandwidth Product | fT | 250 | MHz | VCE = -20V, IC = -10mA, f = 100MHz |
| Noise Figure | NF | 4.0 | dB | VCE = -5.0V, IC = -100A, RS = 1.0k, f = 1.0kHz |
| Switching Characteristics | ||||
| Delay Time | td | 35 | ns | VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA |
| Rise Time | tr | 35 | ns | VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA |
| Storage Time | ts | 225 | ns | VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA |
| Fall Time | tf | 75 | ns | VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA |
2412251151_DIODES-MMBT3906-7-F_C82762.pdf
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