NPN Small Signal Transistor Diodes MMBT3904T-7-F 60V SOT523 Package Lead Free RoHS Compliant Device
Key Attributes
Model Number:
MMBT3904T-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904T-7-F
Package:
SOT-523
Product Description
Product Overview
The MMBT3904T is a 60V NPN small signal transistor in an ultra-small SOT523 surface mount package. Designed for high reliability, it features epitaxial planar die construction and is qualified to AEC-Q101 standards. This device is complementary to the MMBT3906T PNP type and is available in a totally lead-free and fully RoHS compliant, halogen and antimony-free "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT523
- Construction: Epitaxial Planar Die
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 Qualified
- Complementary PNP Type: MMBT3906T
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC = 10A, IE = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 40 | V | IC = 1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 10A, IC = 0 |
| Collector Cutoff Current | ICEX | 50 | nA | VCE = 30V, VEB(OFF) = 3V |
| Base Cutoff Current | IBL | 50 | nA | VCE = 30V, VEB(OFF) = 3V |
| DC Current Gain | hFE | 40 - 300 | IC = 100A to 100mA, VCE = 1V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.20 - 0.30 | V | IC = 10mA, IB = 1mA / IC = 50mA, IB = 5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.65 - 0.95 | V | IC = 10mA, IB = 1mA / IC = 50mA, IB = 5mA |
| Output Capacitance | COBO | 4 | pF | VCB = 5V, f = 1.0MHz, IE = 0 |
| Input Capacitance | CIBO | 8 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 |
| Current Gain-Bandwidth Product | fT | 300 | MHz | VCE = 20V, IC = 10mA, f = 100MHz |
| Delay Time | tD | 35 | ns | VCC = 3V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1mA |
| Rise Time | tR | 35 | ns | VCC = 3.0V, IC = 10mA, IB1 =- IB2 = 1.0mA |
| Storage Time | tS | 200 | ns | VCC = 3.0V, IC = 10mA, IB1 =- IB2 = 1.0mA |
| Fall Time | tF | 50 | ns | VCC = 3.0V, IC = 10mA, IB1 =- IB2 = 1.0mA |
| Power Dissipation | PD | 150 | mW | TA = +25C |
| Thermal Resistance, Junction to Ambient | RJA | 833 | C/W | TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge (Human Body Model) | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic Discharge (Machine Model) | ESD MM | 400 | V |
1808280234_DIODES-MMBT3904T-7-F_C239187.pdf
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