PNP Small Signal Transistor DIODES MMBT3906LP-7B 40V 200mA Molded Plastic X1-DFN1006-3 Package
Key Attributes
Model Number:
MMBT3906LP-7B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3906LP-7B
Package:
DFN-3(1x0.6)
Product Description
MMBT3906LP PNP Small Signal Transistor
The MMBT3906LP is a 40V PNP small signal transistor designed for general-purpose applications. It offers a high collector current of -200mA and a power dissipation of 1000mW. Its compact X1-DFN1006-3 package boasts a 0.60mm2 footprint, significantly smaller than SOT23, and a low profile of 0.5mm, minimizing off-board height. This device is complementary to the DIODES MMBT3904LP NPN transistor. It is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a "Green" device. It is suitable for automotive applications requiring specific change control, with parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities.
Product Attributes
- Brand: DIODES
- Package: X1-DFN1006-3
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: NiPdAu, Solderable per MIL-STD-202, Method 208
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -6 | V | |
| Collector Current | IC | -200 | mA | |
| Peak Collector Current | ICM | -200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 400 (Note 6) 1000 | mW | @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 310 (Note 6) 120 | C/W | @TA = +25C |
| Thermal Resistance, Junction to Case (Note 5) | RJC | 60 | C/W | @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 200 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage (Note 8) | BVCEO | -40 | V | IC = -10.0mA |
| Emitter-Base Breakdown Voltage | BVEBO | -6 | V | IE = -100A |
| Collector Cutoff Current | ICEX | -50 | nA | VCE = -30V, VEB(off) = -3.0V |
| Collector Cutoff Current | ICBO | -50 | nA | VCB = -30V |
| Base Cutoff Current | IBL | -50 | nA | VCE = -30V, VEB(off) = -3.0V |
| DC Current Gain | hFE | 60 (IC = -100A, VCE = -1.0V) 80 (IC = -1.0mA, VCE = -1.0V) 100-300 (IC = -10mA, VCE = -1.0V) 60 (IC = -50mA, VCE = -1.0V) 30 (IC = -100mA, VCE = -1.0V) | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 (IC = -10mA, IB = -1.0mA) -0.40 (IC = -50mA, IB = -5.0mA) | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 to -0.85 (IC = -10mA, IB = -1.0mA) -0.95 (IC = -50mA, IB = -5.0mA) | V | |
| Output Capacitance | Cobo | 4.5 | pF | VCB = -5.0V, f = 1.0MHz |
| Input Capacitance | Cibo | 10 | pF | VEB = -0.5V, f = 1.0MHz |
| Input Impedance | hie | 2 to 12 | k | VCE = -10V, IC = -1.0mA, f = 1.0kHz |
| Voltage Feedback Ratio | hre | 0.1 to 10 x 10-4 | ||
| Small Signal Current Gain | hfe | 100 to 400 | ||
| Output Admittance | hoe | 3 to 60 | S | |
| Current Gain-Bandwidth Product | fT | 300 | MHz | VCE = -20V, IC = -10mA, f = 100MHz |
| Switching Characteristics | ||||
| Delay Time | td | 35 | ns | VCC = -3.0V, IC = -10mA, IB1 = -IB2 = -1.0mA |
| Rise Time | tr | 35 | ns | |
| Storage Time | ts | 225 | ns | |
| Fall Time | tf | 75 | ns | |
2412251151_DIODES-MMBT3906LP-7B_C780859.pdf
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