150V NPN Low Saturation Transistor Diodes FMMT625TA Suitable for DC DC Power Modules and Motor Drive
Key Attributes
Model Number:
FMMT625TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
135MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT625TA
Package:
SOT-23
Product Description
Diodes Incorporated FMMT625 150V NPN Silicon Low Saturation Transistor
The Diodes Incorporated FMMT625 is a 150V NPN silicon low saturation transistor designed for various applications including DC-DC modules, power management functions, and motor control and drive functions. It offers high performance with a maximum continuous collector current of 1A and a power dissipation of 625mW. This device is characterized by its high breakdown voltage, low saturation voltage, and excellent hFE characteristics up to 3.0A. It is manufactured using a "Green" molding compound, is totally lead-free, and fully RoHS compliant, meeting stringent environmental and reliability standards.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101 Standards, UL Flammability Classification Rating 94V-0, JEDEC Class 3B (ESD HBM), JEDEC Class C (ESD MM)
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Automotive-Compliant Part Available: FMMT625Q (under separate datasheet)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 150 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 100A |
| Collector Cut-off Current | ICBO | 100 | nA | VCB = 130V |
| Emitter Cut-off Current | IEBO | 100 | nA | VEB = 5V |
| Collector Emitter Cut-off Current | ICES | 100 | nA | VCES = 130V |
| Static Forward Current Transfer Ratio (hFE) | hFE | 200 - 450 | IC = 10mA to 3A, VCE = 10V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 26 - 300 | mV | IC = 0.1A to 1A, IB = 1mA to 50mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.85 - 1.0 | V | IC = 1A, IB = 50mA |
| Base-Emitter Turn-on Voltage | VBE(ON) | 0.74 - 1.0 | V | IC = 1A, VCE = 10V |
| Transition Frequency | fT | 100 - 135 | MHz | IC = 50mA, VCE = 10V, f = 100MHz |
| Collector Output Capacitance | COBO | 6 - 10 | pF | VCB = 10V, f = 1MHz |
| Turn-On Time | t(ON) | 160 | ns | VCC = 50V, IC = 500mA, IB1 = -IB2 = 50mA |
| Turn-Off Time | t(OFF) | 1500 | ns | VCC = 50V, IC = 500mA, IB1 = -IB2 = 50mA |
| Maximum Continuous Collector Current | IC | 1 | A | |
| Power Dissipation | PD | 625 | mW | @TA = +25C (on 25mm x 25mm FR-4 PCB) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
2412251027_DIODES-FMMT625TA_C212600.pdf
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