40V PNP Transistor DIODES FZT1151ATA Featuring Matte Tin Plated Lead Finish and JEDEC Qualification
Key Attributes
Model Number:
FZT1151ATA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
145MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT1151ATA
Package:
SOT-223
Product Description
Product Overview
The FZT1151A is a 40V PNP medium power transistor in a SOT223 package. It offers a high continuous collector current of -3A and a peak pulse current of -5A, with a low saturation voltage of less than -140mV @ -1A. This device features high gain hold-up, specified up to -5A.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Material: Molded Plastic ("Green" Molding Compound)
- Flammability Rating: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Lead Finish: Matte Tin Plated
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards for High Reliability.
- Automotive Grade Availability: Yes (Q-suffix parts, AEC-Q100/101/200 qualified, PPAP capable, IATF 16949 certified facilities)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -45 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -7 | V | |
| Continuous Collector Current | IC | -3 | A | @TA = +25C, unless otherwise specified. |
| Peak Pulse Current | ICM | -5 | A | @TA = +25C, unless otherwise specified. |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -45 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCER | -40 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cut-Off Current | ICBO | -100 | nA | VCB = -36V, @TA = +25C, unless otherwise specified. |
| Emitter Cut-Off Current | IEBO | -100 | nA | VEB = -4V, @TA = +25C, unless otherwise specified. |
| Collector Emitter Cut-Off Current | ICEO | -100 | nA | VCE = -32V, @TA = +25C, unless otherwise specified. |
| DC Current Transfer Ratio (hFE) | hFE | 270 - 450 | IC = -10mA, VCE = -2V | |
| 250 - 800 | IC = -500mA, VCE = -2V | |||
| 180 - 300 | IC = -2A, VCE = -2V | |||
| 100 - 190 | IC = -3A, VCE = -2V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -60 - -90 | mV | IC = -100mA, IB = -1.0mA |
| -120 - -180 | mV | IC = -500mA, IB = -5mA | ||
| -140 - -220 | mV | IC = -1A, IB = -20mA | ||
| -170 - -260 | mV | IC = -1.8A, IB = -70mA | ||
| -200 - -300 | mV | IC = -3A, IB = -250mA | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -985 - -1100 | mV | IC = -3A, IB = -250mA |
| Base-Emitter Turn-On Voltage | VBE(on) | -850 - -1000 | mV | IC = -3A, VCE = -2V |
| Transitional Frequency | fT | 145 | MHz | IC = -50mA, VCE = -10V, f = 50MHz |
| Output Capacitance | Cobo | 40 | pF | VCB = -10V, f = 1MHz |
| Switching Time | ton | 170 | ns | VCC = -30V, IC = -2A, IB = 20mA |
| Switching Time | toff | 460 | ns | VCC = -30V, IC = -2A, IB = 20mA |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 3.0 | W | Note 5 |
| 2.0 | W | Note 6 | ||
| 1.6 | W | Note 7 | ||
| 1.2 | W | Note 8 | ||
| Thermal Resistance, Junction to Ambient | RJA | 41.7 | C/W | Note 5 |
| 62.5 | C/W | Note 6 | ||
| 78.1 | C/W | Note 7 | ||
| 104 | C/W | Note 8 | ||
| Thermal Resistance, Junction to Lead | RJL | 10.9 | C/W | Note 9 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
2412251007_DIODES-FZT1151ATA_C155344.pdf
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