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quality Epitaxial Planar Die Construction Automotive Grade Diodes ADC114YUQ-7 NPN Pre Biased Dual Transistor factory
quality Epitaxial Planar Die Construction Automotive Grade Diodes ADC114YUQ-7 NPN Pre Biased Dual Transistor factory

Epitaxial Planar Die Construction Automotive Grade Diodes ADC114YUQ-7 NPN Pre Biased Dual Transistor

Key Attributes
Model Number: ADC114YUQ-7
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
ADC114YUQ-7
Package:
SOT-363
Product Description

Product Overview

The ADC114YUQ is an NPN pre-biased dual transistor featuring epitaxial planar die construction and built-in biasing resistors. It is designed for automotive applications, is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. This device is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a 'Green' device.

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Epitaxial Planar Die Construction
  • Material: Molded Plastic, Green Molding Compound
  • Color: 'Green' Device
  • Certifications: AEC-Q101 qualified, PPAP capable, IATF 16949 certified facilities
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Nominal Resistor R1R1 (NOM)10kΩ
Nominal Resistor R2R2 (NOM)47kΩ
Supply VoltageVCC50V@ TA = +25°C, unless otherwise specified.
Input VoltageVIN-6 to +40V@ TA = +25°C, unless otherwise specified.
Output Current (Max)IC(MAX)100mA@ TA = +25°C, unless otherwise specified.
Power DissipationPD270mW@ TA = +25°C, unless otherwise specified. (Note 5 & 6)
Thermal Resistance, Junction to Ambient AirRθJA450°C/W(Note 5)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C
Input Voltage (OFF)VI(off)0.3VVCC = 5V, IO = 100μA (Note 7)
Input Voltage (ON)VI(on)1.4VVO = 0.3V, IO = 1mA (Note 8)
Output Voltage (ON)VO(on)0.3VIO/II = 5mA / 0.25mA
Input CurrentII0.88mAVI = 5V
Output Current (OFF)IO(off)0.5μAVCC = 50V, VI = 0V
DC Current GainGI80VO = 5V, IO = 5mA
Input Resistor (R1) Tolerance△R130%
Resistance Ratio Tolerance△(R2/R1)20%
Gain-Bandwidth ProductfT250MHzVCE = 10V, IE = 5mA, f = 100MHz (Note 9)

2210111600_DIODES-ADC114YUQ-7_C3589031.pdf

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