Lead free and halogen free DIODES ZXM61P02FTA P channel MOSFET optimized for power management circuits
Key Attributes
Model Number:
ZXM61P02FTA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
900mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@2.7V,0.75A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
-
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
150pF
Pd - Power Dissipation:
806mW
Gate Charge(Qg):
3.5nC@4.5V
Mfr. Part #:
ZXM61P02FTA
Package:
SOT-23
Product Description
Product Overview
The ZXM61P02F is a 20V P-CHANNEL ENHANCEMENT MODE MOSFET designed with a unique structure that optimizes both low on-resistance and fast switching speed. This makes it an ideal component for high-efficiency power management applications, including DC-DC converters, power management functions, disconnect switches, and motor control. Key benefits include fast switching speed, low on-resistance, low threshold, and low gate drive. This device is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to AEC-Q101 Standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Certifications: Qualified to AEC-Q101 Standards for High Reliability
- Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | -20 | V | TA = +25C |
| RDS(on) @ VGS = -4.5V | RDS(on) | 600 | m | ID = -0.92A |
| RDS(on) @ VGS = -2.7V | RDS(on) | 900 | m | ID = -0.75A |
| Continuous Drain Current @ TA = +25C | ID | -0.92 | A | VGS = -4.5V |
| Continuous Drain Current @ TA = +70C | ID | -0.75 | A | VGS = -4.5V |
| Weight | 0.008 | grams (approximate) | ||
| Case | SOT23 | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID = -250A, VGS = 0V |
| Zero Gate Voltage Drain Current | IDSS | -0.1 | A | VDS = -20V, VGS = 0V |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 12V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.7 to -1.5 | V | ID = -250A, VDS = VGS |
| Static Drain-Source On-Resistance | RDS (ON) | 0.6 | VGS = -4.5V, ID = -0.61A | |
| Static Drain-Source On-Resistance | RDS (ON) | 0.9 | VGS = -2.7V, ID = -0.31A | |
| Forward Transconductance | gfs | 0.56 | S | VDS = -10V, ID = -0.31A |
| Diode Forward Voltage | VSD | -0.95 | V | TJ = +25C, IS = -0.61A, VGS = 0V |
| Reverse Recovery Time | trr | 14.9 | ns | TJ = +25C, IF = -0.61A, di/dt = 100A/s |
| Reverse Recovery Charge | Qrr | 5.6 | nC | |
| Input Capacitance | Ciss | 150 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 70 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 30 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | td(on) | 2.9 | ns | VDD = -110V, ID = -0.93A, RG 6.2 RD 11 |
| Turn-On Rise Time | tr | 6.7 | ns | VDD = -110V, ID = -0.93A, RG 6.2 RD 11 |
| Turn-Off Delay Time | td(off) | 11.2 | ns | VDD = -110V, ID = -0.93A, RG 6.2 RD 11 |
| Turn-Off Fall Time | tf | 10.1 | ns | VDD = -110V, ID = -0.93A, RG 6.2 RD 11 |
| Total Gate Charge | Qg | 3.5 | nC | VDS = -16V, VGS = -4.5V, ID = -0.61A |
| Gate-Source Charge | Qgs | 0.5 | nC | VDS = -16V, VGS = -4.5V, ID = -0.61A |
| Gate-Drain Charge | Qgd | 1.5 | nC | VDS = -16V, VGS = -4.5V, ID = -0.61A |
1809081632_DIODES-ZXM61P02FTA_C150486.pdf
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