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quality DIODES BSS84DW 7 F dual P channel MOSFET with green molding compound and fully RoHS compliant design factory
quality DIODES BSS84DW 7 F dual P channel MOSFET with green molding compound and fully RoHS compliant design factory

DIODES BSS84DW 7 F dual P channel MOSFET with green molding compound and fully RoHS compliant design

Key Attributes
Model Number: BSS84DW-7-F
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V,0.100A
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
-
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
45pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS84DW-7-F
Package:
SOT-363
Product Description

Product Overview

The Diodes Incorporated BSS84DW is a dual P-channel enhancement mode MOSFET designed for high efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) and superior switching performance, making it ideal for general-purpose interfacing switches and power management functions. This device is also suitable for analog switch applications. It is manufactured using a "Green" molding compound and is totally lead-free and fully RoHS compliant.

Product Attributes

  • Brand: Diodes Incorporated
  • Material: Molded Plastic ("Green" Molding Compound)
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards for High Reliability.
  • Compliance: EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage BVDSS -50 V VGS = 0V, ID = -250A
On-Resistance Max RDS(on) Max 10 VGS = -5V, ID = -0.1A
Drain Current Max ID Max -130 mA TA = +25C
Drain-Source Voltage VDSS -50 V @TA = +25C, unless otherwise specified.
Drain-Gate Voltage VDGR -50 V @TA = +25C, unless otherwise specified.
Gate-Source Voltage Continuous VGSS 20 V @TA = +25C, unless otherwise specified.
Drain Current Continuous ID -130 mA @TA = +25C, unless otherwise specified.
Total Power Dissipation PD 300 mW @TA = +25C, unless otherwise specified.
Thermal Resistance, Junction to Ambient RJA 417 C/W @TA = +25C, unless otherwise specified.
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C @TA = +25C, unless otherwise specified.
Gate Threshold Voltage VGS(th) -0.8 to -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS(ON) 6 to 10 VGS = -5V, ID = -0.1A
Forward Transconductance gFS 0.05 S VDS = -25V, ID = -0.1A
Input Capacitance Ciss 45 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 12 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(ON) 10 ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V
Turn-Off Delay Time tD(OFF) 18 ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V
Case SOT363
Weight 0.006 grams (Approximate)
Part Number BSS84DW-7-F SOT363 (Standard), 3,000/Tape & Reel

2412251008_DIODES-BSS84DW-7-F_C161617.pdf

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