Complementary Pair Enhancement Mode MOSFET Diodes DMG6601LVT-7 for Power Management Applications
Key Attributes
Model Number:
DMG6601LVT-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
142mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
46pF
Input Capacitance(Ciss):
541pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
13.8nC@10V
Mfr. Part #:
DMG6601LVT-7
Package:
TSOT-26
Product Description
Product Overview
The Diodes Incorporated DMG6601LVT is a complementary pair of enhancement mode MOSFETs designed for high efficiency power management applications. These MOSFETs minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal applications include backlighting, power management functions, and DC-DC converters.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Complementary Pair Enhancement Mode MOSFET
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: NiPdAu over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Reliability: Qualified to AEC-Q101 Standards
Technical Specifications
| Characteristic | Q1 (N-Channel) | Q2 (P-Channel) | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| V(BR)DSS | 30V | -30V | ||
| RDS(ON) max @ VGS = 10V | 55m | 110m | TA = +25C | |
| RDS(ON) max @ VGS = 4.5V | 65m | 142m | TA = +25C | |
| Package | TSOT26 | |||
| ID max @ TA = +25C | 3.8A | -2.5A | ||
| ID max @ TA = +25C | 3.6A | -2.1A | (VGS = 4.5V for Q1, VGS = -4.5V for Q2) | |
| Maximum Ratings | ||||
| Drain-Source Voltage (VDSS) | 30V | -30V | V | |
| Gate-Source Voltage (VGSS) | 12V | V | ||
| Continuous Drain Current (ID) @ TA = +25C, VGS = 10V | 3.8A | -2.5A | A | Steady State |
| Continuous Drain Current (ID) @ TA = +70C, VGS = 10V | 3.0A | -2.0A | A | Steady State |
| Pulsed Drain Current (IDM) | 20A | -15A | A | t<10s |
| Thermal Characteristics | ||||
| Total Power Dissipation (PD) @ TA = +25C | 0.85W | W | Note 5 | |
| Total Power Dissipation (PD) @ TA = +70C | 0.54W | W | Note 5 | |
| Thermal Resistance, Junction to Ambient (RJA) @ TA = +25C | 147 C/W | C/W | Steady state, Note 5 | |
| Total Power Dissipation (PD) @ TA = +25C | 1.3W | W | Note 6 | |
| Thermal Resistance, Junction to Ambient (RJA) @ TA = +25C | 96 C/W | C/W | Steady state, Note 6 | |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 C | C | ||
| Electrical Characteristics - Q1 (N-Channel) | ||||
| Drain-Source Breakdown Voltage (BVDSS) | 30 | - | V | VGS = 0V, ID = 250A |
| Gate Threshold Voltage (VGS(th)) | 0.5 | 1.5 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance (RDS (ON)) @ VGS = 10V, ID = 3.4A | - | 55 | m | TA = +25C |
| Static Drain-Source On-Resistance (RDS (ON)) @ VGS = 4.5V, ID = 3A | - | 65 | m | TA = +25C |
| Input Capacitance (Ciss) | - | 422 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Electrical Characteristics - Q2 (P-Channel) | ||||
| Drain-Source Breakdown Voltage (BVDSS) | -30 | - | V | VGS = 0V, ID = -250A |
| Gate Threshold Voltage (VGS(th)) | -0.4 | -1.2 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance (RDS (ON)) @ VGS = -10V, ID = -2.3A | - | 110 | m | TA = +25C |
| Static Drain-Source On-Resistance (RDS (ON)) @ VGS = -4.5V, ID = -2A | - | 142 | m | TA = +25C |
| Input Capacitance (Ciss) | - | 541 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Mechanical Data | ||||
| Case | TSOT26 | |||
| Weight | 0.008 grams (approximate) | grams | ||
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| DMG6601LVT-7 | TSOT26 | 3K/Tape & Reel | Note 4 | |
2409291808_DIODES-DMG6601LVT-7_C278728.pdf
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