1 Amp Bridge Rectifier Diodes ABS10A-13 with Glass Passivated Die and Matte Tin Finish Terminals
Key Attributes
Model Number:
ABS10A-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
ABS10A-13
Package:
SOPA-4
Product Description
Product Overview
The ABS10A is a 1.0A surface mount glass passivated bridge rectifier. It is suitable for AC to DC bridge full wave rectification in various applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include a miniature package for space saving, high current capability, suitability for SMT manufacturing, and low forward voltage drop. This device is lead-free, RoHS compliant, and halogen/antimony-free, designated as a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Bridge Rectifier
- Construction: Glass Passivated Die
- Package: SOPA-4
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Terminals: Lead Free Plating (Matte Tin Finish)
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition | |
| Product Summary | |||||
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V | ||
| Average Rectified Output Current | IO | 1.0 | A | @ TA = +30C | |
| Forward Voltage | VF | 1.1 | V | IF = 1.0A, TA = +25C | |
| Reverse Leakage Current | IR | 5 | A | VR = 1,000V, TA = +25C | |
| Maximum Ratings | |||||
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 1000 | V | Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. | |
| RMS Reverse Voltage | VR(RMS) | 700 | V | ||
| Average Rectified Output Current | IO | 1.0 | A | @ TA = +30C | |
| Non-Repetitive Peak Forward Surge Current (8.3ms Single Half Sine-Wave) | IFSM | 35 | A | Superimposed on Rated Load | |
| It Rating for Fusing (1ms < t < 8.3ms) | It | 5.08 | AS | ||
| Thermal Characteristics | |||||
| Typical Thermal Resistance, Junction to Ambient (Per Element) | RJA | 66 | C/W | Note 6 | |
| Typical Thermal Resistance, Junction to Lead (Per Element) | RJL | 37 | C/W | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | ||
| Electrical Characteristics | |||||
| Reverse Breakdown Voltage (Per Element) | V(BR)R | 1,000 | V | IR = 5A | |
| Forward Voltage (Per Element) | VF | 1.1 | V | IF = 1.0A, TA = +25C | |
| Leakage Current (Per Element) | IR | 5 / 500 | A | VR = 1,000V, TA = +25C / VR = 1,000V, TA = +125C | |
| Total Capacitance (Per Element) | CT | 9 | pF | VR = 4V, f = 1.0MHz | |
2105241236_DIODES-ABS10A-13_C442622.pdf
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