power device DIODES DMP10H400SE-13 100V P Channel MOSFET with low on resistance and fast switching capabilities
Key Attributes
Model Number:
DMP10H400SE-13
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
203mΩ@10V;241mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 P-Channel
Output Capacitance(Coss):
42pF
Input Capacitance(Ciss):
1.239nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
DMP10H400SE-13
Package:
SOT-223
Product Description
Product Overview
The Diodes Incorporated DMP10H400SE is a 100V P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance while maintaining superior switching performance, making it ideal for motor control, DC-DC converters, power management functions, and uninterruptible power supplies. This device features low gate drive, low input capacitance, and fast switching speed. It is also Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to AEC-Q101 Standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: ADVANCE INFORMATION NEW PRODUCT
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Qualification: Qualified to AEC-Q101 Standards for High Reliability
- Automotive Variant: DMP10H400SEQ (Available Under Separate Datasheet)
- Case Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Copper Lead Frame
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | BVDSS | -100 | V | TA = +25C |
| On-Resistance (Max) | RDS(ON) | 250 | m | VGS = -10V, ID = -5A |
| On-Resistance (Max) | RDS(ON) | 300 | m | VGS = -4.5V, ID = -5A |
| Continuous Drain Current | ID | -2.3 | A | TA = +25C, VGS = -10V |
| Continuous Drain Current | ID | -2.1 | A | TA = +25C, VGS = -4.5V |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -100 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 20 | V | @TA = +25C |
| Continuous Drain Current, VGS = -10V (Steady State) | ID | -6.0 | A | TC = +25C |
| Continuous Drain Current, VGS = -10V (Steady State) | ID | -2.3 | A | TA = +25C |
| Maximum Body Diode Forward Current | IS | -1.9 | A | (Note 5) |
| Pulsed Drain Current | IDM | -10 | A | (380s Pulse, Duty Cycle = 1%) |
| Thermal Characteristics | ||||
| Total Power Dissipation | PD | 2.0 | W | TA = +25C (Note 5) |
| Total Power Dissipation | PD | 1.3 | W | TA = +70C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 62 | C/W | (Note 5) |
| Total Power Dissipation | PD | 13.7 | W | TC = +25C (Note 5) |
| Thermal Resistance, Junction to Case | RJC | 9.1 | C/W | (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS = 0V, ID = -250A (Note 6) |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = -80V, VGS = 0V (Note 6) |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V (Note 6) |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -3.0 | V | VDS = VGS, ID = -250A (Note 6) |
| Static Drain-Source On-Resistance | RDS(ON) | 203 to 250 | m | VGS = -10V, ID = -5A (Note 6) |
| Static Drain-Source On-Resistance | RDS(ON) | 241 to 300 | m | VGS = -4.5V, ID = -5A (Note 6) |
| Diode Forward Voltage | VSD | -0.9 to -1.2 | V | VGS = 0V, IS = -5A (Note 6) |
| Input Capacitance | Ciss | 1239 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz (Note 7) |
| Output Capacitance | Coss | 42 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz (Note 7) |
| Reverse Transfer Capacitance | Crss | 28 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz (Note 7) |
| Gate Resistance | Rg | 13 | VDS = 0V, VGS = 0V, f = 1.0MHz (Note 7) | |
| Total Gate Charge | Qg | 8.4 | nC | VGS = -4.5V, VDS = -60V, ID = -5A (Note 7) |
| Total Gate Charge | Qg | 17.5 | nC | VGS = -10V, VDS = -60V, ID = -5A (Note 7) |
| Gate-Source Charge | Qgs | 2.8 | nC | (Note 7) |
| Gate-Drain Charge | Qg | 3.2 | nC | (Note 7) |
| Turn-On Delay Time | tD(ON) | 9.1 | ns | VDD = -50V, RG = 9.1, ID = -5A (Note 7) |
| Turn-On Rise Time | tR | 14.9 | ns | VDD = -50V, RG = 9.1, ID = -5A (Note 7) |
| Turn-Off Delay Time | tD(OFF) | 57.4 | ns | VDD = -50V, RG = 9.1, ID = -5A (Note 7) |
| Turn-Off Fall Time | tF | 34.4 | ns | VDD = -50V, RG = 9.1, ID = -5A (Note 7) |
| Body Diode Reverse Recovery Time | tRR | 25.2 | ns | VGS = 0V, IS = -5A, di/dt = 100A/s (Note 7) |
| Body Diode Reverse Recovery Charge | QRR | 24.5 | nC | VGS = 0V, IS = -5A, di/dt = 100A/s (Note 7) |
| Mechanical Data | ||||
| Case | SOT223 | |||
| Weight | 0.112 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | DMP10H400SE-13 | SOT223, 2,500 / Tape & Reel | ||
| Package Outline Dimensions (SOT223) | ||||
| Dimension | Min | Max | Typ | Unit |
| A | 1.55 | 1.65 | 1.60 | mm |
| A1 | 0.010 | 0.15 | 0.05 | mm |
| b | 0.60 | 0.80 | 0.70 | mm |
| b1 | 2.90 | 3.10 | 3.00 | mm |
| C | 0.20 | 0.30 | 0.25 | mm |
| D | 6.45 | 6.55 | 6.50 | mm |
| E | 3.45 | 3.55 | 3.50 | mm |
| E1 | 6.90 | 7.10 | 7.00 | mm |
| e | - | - | 4.60 | mm |
| e1 | - | - | 2.30 | mm |
| L | 0.85 | 1.05 | 0.95 | mm |
| Q | 0.84 | 0.94 | 0.89 | mm |
2412251008_DIODES-DMP10H400SE-13_C156277.pdf
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