Power Management MOSFET Diodes DMN1019USN 7 N Channel with Superior Switching and Gate ESD Protection
Key Attributes
Model Number:
DMN1019USN-7
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
9.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
41mΩ@1.2V,4.6A
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
50.6nC@8V
Mfr. Part #:
DMN1019USN-7
Package:
SC-59
Product Description
Product Overview
The Diodes Incorporated DMN1019USN is a new generation N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It features minimized on-state resistance (RDS(ON)) and superior switching performance, making it ideal for load switches, DC-DC converters, and power management functions. This device offers ESD protection for its gate and is manufactured to be totally lead-free and fully RoHS compliant, as well as Halogen and Antimony free (Green Device). It is qualified to AEC-Q101 standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: DMN1019USN
- Gate Protection: Yes
- Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free (Green Device)
- Reliability: Qualified to AEC-Q101 Standards
- Case Material: Molded Plastic (UL Flammability Rating 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin (Solderable per MIL-STD-202, Method 208)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 12 | V | |
| RDS(ON) MAX @ VGS = 4.5V | 10 | m | TA = +25C | |
| ID @ TA = +25C | 9.3 | A | ||
| RDS(ON) MAX @ VGS = 2.5V | 12 | m | TA = +25C | |
| ID @ TA = +25C | 8.5 | A | ||
| RDS(ON) MAX @ VGS = 1.8V | 14 | m | TA = +25C | |
| ID @ TA = +25C | 7.9 | A | ||
| RDS(ON) MAX @ VGS = 1.5V | 18 | m | TA = +25C | |
| ID @ TA = +25C | 6.9 | A | ||
| RDS(ON) MAX @ VGS = 1.2V | 41 | m | TA = +25C | |
| ID @ TA = +25C | 4.6 | A | ||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 12 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 8 | V | @TA = +25C |
| Continuous Drain Current (Note 6) | ID | 9.3 | A | VGS = 4.5V, Steady State, TA = +25C |
| Continuous Drain Current (Note 6) | ID | 7.4 | A | VGS = 4.5V, Steady State, TA = +70C |
| Pulsed Drain Current (10s pulse, duty cycle = 1%) | IDM | 70 | A | @TA = +25C |
| Maximum Body Diode Forward Current (Note 6) | IS | 2 | A | |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5) | PD | 0.68 | W | TA = +25C |
| Total Power Dissipation (Note 5) | PD | 0.4 | W | TA = +70C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 160 | C/W | Steady state |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 115 | C/W | t<10s |
| Total Power Dissipation (Note 6) | PD | 1.2 | W | TA = +25C |
| Total Power Dissipation (Note 6) | PD | 0.83 | W | TA = +70C |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 96 | C/W | Steady state |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 68 | C/W | t<10s |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 18 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 12 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS =12V, VGS = 0V |
| Gate-Body Leakage | IGSS | 2 | A | VGS = 8V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 0.35 - 0.8 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 7 - 10 | m | VGS = 4.5V, ID = 9.7A |
| Static Drain-Source On-Resistance | RDS(ON) | 8 - 12 | m | VGS = 2.5V, ID = 9A |
| Static Drain-Source On-Resistance | RDS(ON) | 10 - 14 | m | VGS = 1.8V, ID = 8.1A |
| Static Drain-Source On-Resistance | RDS(ON) | 14 - 18 | m | VGS = 1.5V, ID = 4.5A |
| Static Drain-Source On-Resistance | RDS(ON) | 28 - 41 | m | VGS = 1.2V, ID = 2.4A |
| Forward Transfer Admittance | |Yfs| | 28 | S | VDS = 4V, ID = 9.7A |
| Diode Forward Voltage | VSD | 0.8 - 1.2 | V | VGS = 0V, IS = 10A |
| Dynamic Characteristics (Note 8) | ||||
| Input Capacitance | Ciss | 2426 | pF | VDS = 10V, VGS = 0V, f = 1MHz |
| Output Capacitance | Coss | 396 | pF | VDS = 10V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 375 | pF | VDS = 10V, VGS = 0V, f = 1MHz |
| Gate Resistance | Rg | 1.1 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge (VGS = 8V) | Qg | 50.6 | nC | VDS = 4V, ID = 10A |
| Total Gate Charge (VGS = 4.5V) | Qg | 27.3 | nC | |
| Gate-Source Charge | Qgs | 3.4 | nC | |
| Gate-Drain Charge | Qgd | 5.2 | nC | |
| Turn-On Delay Time | tD(ON) | 7.6 | ns | VDD = 4V, VGEN = 5V, ID = 10A, RG = 1, RL = 0.4 |
| Turn-Off Delay Time | tD(OFF) | 22.2 | ns | VDD = 4V, VGEN = 5V, ID = 10A, RG = 1, RL = 0.4 |
| Turn-On Rise Time | tr | 57.6 | ns | VDD = 4V, VGEN = 5V, ID = 10A, RG = 1, RL = 0.4 |
| Turn-Off Fall Time | tf | 16.8 | ns | VDD = 4V, VGEN = 5V, ID = 10A, RG = 1, RL = 0.4 |
| Mechanical Data | ||||
| Case | SC59 | |||
| Weight | 0.014 | grams (approximate) | ||
| Ordering Information | ||||
| Part Number | DMN1019USN-7 | SC59 | 3,000/Tape & Reel | |
| Part Number | DMN1019USN-13 | SC59 | 10,000/Tape & Reel | |
2304140030_DIODES-DMN1019USN-7_C145103.pdf
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