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quality Surface mount diode DIODES 1N5819HW-7-F with molded plastic package and matte tin finish terminals factory
quality Surface mount diode DIODES 1N5819HW-7-F with molded plastic package and matte tin finish terminals factory

Surface mount diode DIODES 1N5819HW-7-F with molded plastic package and matte tin finish terminals

Key Attributes
Model Number: 1N5819HW-7-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
25A
Reverse Leakage Current (Ir):
1mA@40V
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
450mV@1A
Current - Rectified:
1A
Mfr. Part #:
1N5819HW-7-F
Package:
SOD-123
Product Description

1N5819HW SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER

The 1N5819HW is a single rectifier offering low forward voltage (VF) and excellent high-temperature stability. It is designed for general rectification applications, including low-voltage, high-frequency inverters, free-wheeling, and polarity protection. Key features include high surge capability, low power loss for high efficiency, high current capability with low forward voltage drop, and guard ring die construction for transient protection. This device is totally lead-free, fully RoHS compliant, and halogen and antimony free, designated as a "Green" device. An automotive-compliant version (1N5819HWQ) is available under a separate datasheet.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOD123
  • Package Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Polarity: Cathode Band
  • Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating)
  • Weight: 0.01 grams (Approximate)
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Peak Repetitive Reverse VoltageVRRM40V
Average Rectified Output CurrentIO1.0A
Repetitive Peak Forward CurrentIFRM1.5Atp ≤ 1ms, δ ≤ 0.5
Non-Repetitive Peak Forward Surge CurrentIFSM25A8.3ms Single Half Sine-Wave Superimposed on Rated Load
Power DissipationPD550mW(Note 5)
Typical Thermal Resistance Junction to AmbientRθJA225°C/W(Note 5)
Operating and Storage Temperature RangeTJ, TSTG-65 to +150°C
Reverse Breakdown VoltageV(BR)R40VIR = 1.0mA (Note 6)
Forward VoltageVF0.320 - 0.750VIF = 0.1A - 3.0A
Reverse Leakage CurrentIR10 - 75µAVR = 4V - 6V, TA = +25°C - +100°C (Note 6)
Total CapacitanceCT50 - 60pFVR = 4V, f = 1.0MHz

2412251151_DIODES-1N5819HW-7-F_C82544.pdf

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