high voltage silicon bidirectional thyristors DIODES SD09A105E designed for demanding pulse current applications
Key Attributes
Model Number:
SD09A105E
Product Custom Attributes
Mfr. Part #:
SD09A105E
Product Description
Product Overview
The SD09A-E Series are high voltage silicon bidirectional thyristors (SIDACs) designed for high pulse current applications. Featuring glass passivation for reliable operation and high pulse current capability (typ=120A/us), these devices are suitable for demanding applications such as high pressure sodium vapor lighting, strobes, flashers, ignitors, high voltage regulators, pulse generators, and for triggering gates of SCR's and Triacs. They offer robust performance with a maximum dynamic holding current of -100mA and UL recognition.
Product Attributes
- Brand: LITE-ON SEMICONDUCTOR
- Product Type: SIDAC High Voltage Sillicon Bidirectional Thyristors
- Case: JEDEC DO-41 molded plastic
- Terminals: Lead Free Plating (Matte Tin Finish)
- Compliance: Component in accordance to RoHs 2002/95/EC
- Certifications: UL Recognition File # E219635
- Weight: 0.012 ounces, 0.34 grams
Technical Specifications
| Rating Symbol | Value | Unit | Description |
| VDRM, VRRM | +90 / -90 | Volts | Peak Repetitive Off State Voltage (for SD09A105E, SD09A120E, SD09A130E, SD09A160E) |
| VDRM, VRRM | +180 / -180 | Volts | Peak Repetitive Off State Voltage (for SD09A220E, SD09A240E) |
| IT(RMS) | 0.9 | Amp | On-State RMS Current (TL = 80 , Lead Length=3/8, All Conduction Angles) |
| ITSM | 4.0 | Amps | Peak Non-Repetitive Surge Current 60 Hz One Cycle Sine Wave (Tj = 125) |
| TJ | -40 to +125 | Operating Junction Temperature Range | |
| Tstg | -40 to +150 | Storage Temperature Range | |
| RthJL | 40 | /W | Thermal Resistance - Junction to Lead (Lead Length = 3/8 ) |
| TL | 260 | Maximum Lead Solder Temperature (Lead Length 1/16 from Case, 10s Max) | |
| IDRM | ---- to 5 | uA | Peak Repetitive Forward or Reverse Blocking Current (50 to 60 Hz Sine Wave) |
| VTM | ---- to 1.5 | Volts | Peak On-State Voltage (ITM=1A Peak @Tp 300 us, Duty Cycle 2%) |
| VBO | 95 to 110 | Volts | Breakover Voltage (for SD09A105E) |
| VBO | 110 to 130 | Volts | Breakover Voltage (for SD09A120E) |
| VBO | 120 to 140 | Volts | Breakover Voltage (for SD09A130E) |
| VBO | 150 to 170 | Volts | Breakover Voltage (for SD09A160E) |
| VBO | 210 to 230 | Volts | Breakover Voltage (for SD09A220E) |
| VBO | 220 to 250 | Volts | Breakover Voltage (for SD09A240E) |
| IH | ---- to 100 | mA | Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL=100 Ohm) |
| Rs | 0.1 ---- ---- | k | Switching Resistance (Sine Wave, 50 to 60 Hz) |
| di/dt | ---- 120 ---- | A/us | Critical Rate of Rise of On-State Current, Critical Damped Waveform Circuit (IPK = 130 A, Pulse Width = 10 us) |
2504101957_DIODES-SD09A105E_C17668660.pdf
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