Glass Passivated Die Bridge Rectifier DIODES HDS20M-13 Low Forward Voltage Drop for Power Conversion
Key Attributes
Model Number:
HDS20M-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
110A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
950mV@1A
Current - Rectified:
2A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
HDS20M-13
Package:
SMD
Product Description
Product Overview
The HDS20M is an advanced information, 2A surface mount glass passivated bridge rectifier. It is suitable for AC to DC bridge full wave rectification in applications such as SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a miniature package for space saving, low leakage current, suitability for SMT manufacturing, and a low forward voltage drop. This device is lead-free, RoHS compliant, and halogen and antimony free (Green Device).
Product Attributes
- Brand: Diodes Incorporated
- Origin: Not specified
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Color: Not specified
- Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Product Summary | ||||
| Reverse Voltage | VRRM | 1000 | V | @TA = +25C |
| Output Current | IO | 2 | A | @TA = +25C |
| Forward Voltage | VF | 0.95 | V | @TA = +25C |
| Reverse Current | IR | 5 | A | @TA = +25C |
| Maximum Ratings | ||||
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V | Single phase, half wave, 60Hz, resistive or inductive load. |
| RMS Reverse Voltage | VR(RMS) | 700 | V | Single phase, half wave, 60Hz, resistive or inductive load. |
| Average Rectified Output Current | IO | 2.0 | A | @ TC = +88C |
| Non-Repetitive Peak Forward Surge Current (8.3ms) | IFSM | 55 | A | Single Half Sine-Wave Superimposed on Rated Load |
| Non-Repetitive Peak Forward Surge Current (1ms) | IFSM | 110 | A | Single Half Sine-Wave Superimposed on Rated Load |
| It Rating for Fusing (1ms < t < 8.3ms) | It | 8.03 | AS | -- |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction to Ambient (Per Element) | RJA | 20 | C/W | Typical |
| Thermal Resistance, Junction to Case (Per Element) | RJC | 16 | C/W | Typical |
| Thermal Resistance, Junction to Lead (Per Element) | RJL | 18 | C/W | Typical |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | -- |
| Electrical Characteristics | ||||
| Reverse Breakdown Voltage (Per Element) | V(BR)R | 1,000 | V | IR = 5A |
| Forward Voltage (Per Element) | VF | 0.92 - 0.95 | V | IF = 1A, TA = +25C |
| Leakage Current (Per Element) | IR | 0.11 (TA=+25C), 45 (TA=+125C), 5 (VR=1000V, TA=+25C), 100 (VR=1000V, TA=+125C) | A | VR = 1,000V |
| Total Capacitance (Per Element) | CT | 13 | pF | VR = 4V, f = 1.0MHz |
2210281030_DIODES-HDS20M-13_C460886.pdf
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