loss Schottky barrier rectifier DIODES DFLS1150-7 with 1.0A current rating and green compliant materials

Key Attributes
Model Number: DFLS1150-7
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@150V
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
820mV@1A
Current - Rectified:
1A
Mfr. Part #:
DFLS1150-7
Package:
PowerDI-123
Product Description

DFLS1150 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

The DFLS1150 is a 1.0A high voltage Schottky barrier rectifier designed for applications requiring low power loss and high efficiency. It features guard ring die construction for transient protection and a patented interlocking clip design for high surge current capacity. This device is lead-free, RoHS compliant, and halogen and antimony free, making it a "Green" device. An automotive-compliant version is available under the part number DFSL1150Q.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: PowerDI 123
  • Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Annealed over Copper Leadframe, Solderable per MIL-STD-202, Method 208
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Origin: Not specified in the document
  • Color: Not specified in the document

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Peak Repetitive Reverse VoltageVRRM, VRWM, VR150V
RMS Reverse VoltageVR(RMS)106V
Average Forward CurrentIF(AV)1.0ASingle phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Non-Repetitive Peak Forward Surge CurrentIFSM50A8.3ms Single Half Sine Wave Superimposed on Rated Load
Thermal Resistance Junction to Soldering PointRJS7C/WTyp
Thermal Resistance Junction to AmbientRJA125C/WTA = +25C
Operating and Storage Temperature RangeTJ, TSTG-55 to +175C
Reverse Breakdown VoltageV(BR)R150VIR = 2A
Forward VoltageVF0.82VIF = 1.0A
Leakage CurrentIR2AVR = 150V, TA = +25C
Total CapacitanceCT28pFVR = 5VDC, f = 1MHz

2412251008_DIODES-DFLS1150-7_C156325.pdf

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