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quality Bridge Rectifier DIODES GBJ3510-F 35A Glass Passivated Die Construction 1000V Peak Reverse Voltage factory
quality Bridge Rectifier DIODES GBJ3510-F 35A Glass Passivated Die Construction 1000V Peak Reverse Voltage factory

Bridge Rectifier DIODES GBJ3510-F 35A Glass Passivated Die Construction 1000V Peak Reverse Voltage

Key Attributes
Model Number: GBJ3510-F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
400A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.1V@17.5A
Current - Rectified:
3.6A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
GBJ3510-F
Package:
GBJ
Product Description

GBJ3510 35A Glass Passivated Bridge Rectifier

The GBJ3510 is a high-performance 35A glass-passivated bridge rectifier designed for printed circuit board applications. It features high case dielectric strength, low reverse leakage current, and a surge overload rating of up to 400A peak. This product is RoHS compliant and lead-free.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: Bridge Rectifier
  • Material: Glass Passivated Die Construction, Molded Plastic Case
  • Certifications: RoHS Compliant
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

Characteristic Symbol Value Unit Conditions
Peak Repetitive Reverse Voltage VRRM, VRWM, VR 1000 V Single phase, half wave, 60Hz, resistive or inductive load
RMS Reverse Voltage VR(RMS) 700 V Single phase, half wave, 60Hz, resistive or inductive load
Average Forward Rectified Output Current IO 35 A With Heatsink @ TC = +80C
Average Forward Rectified Output Current IO 3.6 A Without Heatsink @ TC = +25C
Non-Repetitive Peak Forward Surge Current IFSM 400 A 8.3 ms Single Half Sine-Wave
I2t Rating for Fusing I2t 664 A2S 3ms < t < 8.3ms
Mounting Torque TOR 0.8 N.m Maximum
Typical Thermal Resistance Junction to Case RJC 1.0 C/W Per element, mounted on 250 x 250 x 25mm aluminum plate heat sink
Typical Thermal Resistance Junction to Lead RJL 1.5 C/W Per element, mounted on 250 x 250 x 25mm aluminum plate heat sink
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C -
Forward Voltage (Per Element) VFM 1.1 V @ IF = 17.5A
Peak Reverse Current (Per Element) IR 10 A @ TC = +25C at Rated DC Blocking Voltage
Peak Reverse Current (Per Element) IR 500 A @ TC = +125C at Rated DC Blocking Voltage
Typical Total Capacitance (Per Element) CT 150 pF Measured at 1.0MHz and applied reverse voltage of 4.0V DC

2007202036_DIODES-GBJ3510-F_C705327.pdf

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