Thermally PowerDI5 package diode DIODES SBR10U200P5-13 with patented Super Barrier Rectifier technology
Key Attributes
Model Number:
SBR10U200P5-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
180A
Reverse Leakage Current (Ir):
100uA@200V
Operating Junction Temperature Range:
-65℃~+175℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
-
Voltage - Forward(Vf@If):
880mV@10A
Current - Rectified:
10A
Mfr. Part #:
SBR10U200P5-13
Package:
PowerDI-5
Product Description
Product Overview
The SBR10U200P5 is a 10A Super Barrier Rectifier housed in a compact, thermally efficient PowerDI5 package. It offers low forward voltage drop (VF) and low reverse leakage at high temperatures, making it ideal for bridge diodes, freewheeling diodes, blocking diodes, and reverse protection diodes. Key features include ultra-low forward voltage drop, excellent high-temperature stability, patented Super Barrier Rectifier Technology (SBR), soft and fast switching capability, and a high operating junction temperature of +175C.
Product Attributes
- Brand: Diodes Incorporated
- Technology: Super Barrier Rectifier (SBR)
- Package: PowerDI5
- Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0
- Finish: Matte Tin Finish Annealed over Copper Leadframe
- Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device)
- Automotive Compliant Part: Available under separate datasheet (SBR10U200P5Q)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VRM | 200 | V | |
| Average Rectified Output Current | IO | 10 | A | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 180 | A | 8.3ms Single Half Sine-Wave Superimposed on Rated Load |
| Repetitive Peak Avalanche Power | PARM | 3,000 | W | 1s, +25C |
| Typical Thermal Resistance (Junction to Ambient) | RJA | 70 | C/W | Device mounted on FR-4 PCB with minimum recommended pad layout |
| Typical Thermal Resistance (Junction to Case) | RJC | 14 | C/W | Device mounted on FR-4 PCB with minimum recommended pad layout |
| Typical Thermal Resistance (Junction to Ambient) | RJA | 20 | C/W | Device mounted on FR-4 PCB with 1-inch pad layout and additional HK2 (45mm x 20mm x12mm) |
| Typical Thermal Resistance (Junction to Case) | RJC | 3 | C/W | Device mounted on FR-4 PCB with 1-inch pad layout and additional HK2 (45mm x 20mm x12mm) |
| Operating Temperature Range (Junction) | TJ | -65 to +175 | C | Reverse Mode; DC Forward Mode (200 C) |
| Storage Temperature Range | TSTG | -65 to +175 | C | |
| Forward Voltage Drop | VF | 0.88 | V | IF = 10A, TJ = +25C |
| Forward Voltage Drop | VF | 0.82 | V | IF = 10A, TJ = +125C |
| Forward Voltage Drop | VF | 0.75 | V | IF = 5A, TJ = +25C |
| Forward Voltage Drop | VF | 0.62 | V | IF = 5A, TJ = +125C |
| Forward Voltage Drop | VF | 0.83 | V | IF = 5A, TJ = +25C |
| Forward Voltage Drop | VF | 0.67 | V | IF = 5A, TJ = +125C |
| Leakage Current | IR | 0.18 | mA | VR = 200V, TJ = +25C |
| Leakage Current | IR | 10 | mA | VR = 200V, TJ = +125C |
| Leakage Current | IR | 0.1 | mA | VR = 200V, TJ = +25C |
2412251006_DIODES-SBR10U200P5-13_C155266.pdf
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