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quality Surface Mount DIODES SBR1U200P1-7 Rectifier with High Surge Current Capacity and Low Reverse Leakage Current factory
quality Surface Mount DIODES SBR1U200P1-7 Rectifier with High Surge Current Capacity and Low Reverse Leakage Current factory

Surface Mount DIODES SBR1U200P1-7 Rectifier with High Surge Current Capacity and Low Reverse Leakage Current

Key Attributes
Model Number: SBR1U200P1-7
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Reverse Leakage Current (Ir):
50uA@200V
Operating Junction Temperature Range:
-65℃~+175℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
820mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
SBR1U200P1-7
Package:
PowerDI-123
Product Description

Product Overview

The SBR1U200P1 is a 1.0A Super Barrier Rectifier in a PowerDI123 surface mount package. It offers ultra-low forward voltage drop, low reverse leakage current, and superior reverse avalanche capability, making it ideal for applications requiring excellent high-temperature stability and high surge current capacity. This device features patented Super Barrier Rectifier Technology (SBR) and soft, fast switching capability.

Product Attributes

  • Brand: Diodes Incorporated
  • Technology: Super Barrier Rectifier (SBR)
  • Package: PowerDI123
  • Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to AEC-Q101 Standards
  • Automotive-Compliant Part Available: SBR1U200P1Q
  • Material: Molded Plastic, UL Flammability Classification Rating 94V-0
  • Finish: Lead-Free, Matte Tin Finish Annealed over Copper Leadframe
  • Polarity Indicator: Cathode Band

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VRM200VSingle phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Average Rectified Output CurrentIO1.0A(See Figure 1)
Non-Repetitive Peak Forward Surge CurrentIFSM40A8.3ms Single Half Sine-Wave Superimposed on Rated Load
Forward VoltageVF0.82 (Max)VIF = 1.0A, TJ = +25C
Forward VoltageVF0.68 (Typ)VIF = 1.0A, TJ = +125C
Reverse CurrentIR50 (Max)AVR = 200V, TJ = +25C
Reverse Recovery TimetRR25 (Max)nsIF = 0.5A, IR = 1A, IRR = 0.25A
Maximum Thermal Resistance Junction to AmbientRJA217C/WFR-4 PCB, 2 oz. Copper, minimum recommended pad layout
Maximum Thermal Resistance Junction to AmbientRJA138C/WPolymide PCB, 2 oz. Copper, minimum recommended pad layout
Operating and Storage Temperature RangeTJ, TSTG-65 to +175C

1810221622_DIODES-SBR1U200P1-7_C86903.pdf

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