Plastic Encapsulated PNP Transistor Doeshare BC807-25 SOT-23 Package for Circuit Applications
Key Attributes
Model Number:
BC807-25
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC807-25
Package:
SOT-23
Product Description
Product Overview
The BC807 is a PNP Plastic-Encapsulated Transistor designed for general-purpose applications. It offers high stability and reliability, making it suitable for various electronic circuits. This transistor is complementary to the BC817 and comes in a compact SOT-23 small outline plastic package, allowing for flexible mounting positions.
Product Attributes
- Brand: DOESHARE
- Package Type: SOT-23 Plastic-Encapsulate Transistors
- Transistor Type: PNP
- Material: Plastic-Encapsulate
- Certifications: Epoxy UL: 94V-0
- Mounting Position: Any
- Device Marking Code: BC807
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||
| Collector-Base Voltage | VCBO | -50 | V | |
| Collector-Emitter Voltage | VCEO | -45 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current-Continuous | IC | -500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55 to +150 | ||
| Thermal resistance From junction to ambient | RJA | 417 | /W | |
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10uA, IE=0 | -50 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 | -45 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-1uA, IC=0 | -5 | V |
| Collector cut-off current | ICBO | VCB=-45V, IE=0 | -100 | nA |
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -100 | nA |
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 100 to 600 | |
| hFE(2) | VCE=-1V, IC=-500mA | 200 (Min) | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB=-50mA | -0.70 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB=-50mA | -1.20 | V |
| Transition frequency | fT | VCE=-5V, IC=-10mA,f=100MHz | 100 | MHz |
2410121931_Doeshare-BC807-25_C2931727.pdf
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