Diodes BSS138 7 F N Channel Enhancement Mode MOSFET with High Reliability and UL Flammability Rating
Key Attributes
Model Number:
BSS138-7-F
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
300mW
Mfr. Part #:
BSS138-7-F
Package:
SOT-23
Product Description
Product Overview
The BSS138 is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power-management applications, including systems and load switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. This device is totally lead-free, fully RoHS compliant, and Halogen and Antimony free, qualifying as a "Green" device. It is also qualified to JEDEC standards for high reliability. An automotive-compliant version (BSS138Q) is available under a separate datasheet.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Reliability: Qualified to JEDEC standards (as referenced in AEC-Q)
- Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
- Terminal Finish: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | BVDSS | 50 | V | TA = +25C |
| On-Resistance (Drain-Source) | RDS(ON) | 3.5 | VGS = 10V | |
| Continuous Drain Current | ID | 200 | mA | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 50 | V | |
| Drain-Gate Voltage | VDGR | 50 | V | RGS 20k |
| Gate-Source Voltage (Continuous) | VGSS | 20 | V | |
| Gate-Source Voltage (Non Repetitive, Pulse Width<50s) | 40 | V | ||
| Drain Current (Continuous) | ID | 200 | mA | |
| Pulsed Drain Current (10s Pulse Duty Cycle = 1%) | IDM | 1 | A | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 300 | mW | TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 417 | C/W | TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 50 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 0.5 | A | VDS = 50V, VGS = 0V |
| Gate-Body Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 0.5 to 1.5 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | VGS = 10V, ID = 0.22A | |
| Forward Transconductance | gFS | 100 | mS | VDS = 25V, ID = 0.2A, f = 1.0kHz |
| Input Capacitance | Ciss | 50 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 25 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 8.0 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | 20 | ns | VDD = 30V, ID = 0.2A, RGEN = 50 |
| Turn-Off Delay Time | tD(OFF) | 20 | ns | VDD = 30V, ID = 0.2A, RGEN = 50 |
| Mechanical Data | ||||
| Package | SOT23 | |||
| Weight (Approximate) | 0.008 | grams | ||
| Ordering Information | ||||
| Part Number | Package | Packing | Qty. | Carrier |
| BSS138-7-F | SOT23 (Standard) | Tape & Reel | 3000 | |
| BSS138-13-F | SOT23 (Standard) | Tape & Reel | 10000 | |
2412251054_DIODES-BSS138-7-F_C40912.pdf
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