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quality Diodes DMG2302UK 7 N Channel Enhancement Mode MOSFET with Low On Resistance and High Switching Speed factory
quality Diodes DMG2302UK 7 N Channel Enhancement Mode MOSFET with Low On Resistance and High Switching Speed factory

Diodes DMG2302UK 7 N Channel Enhancement Mode MOSFET with Low On Resistance and High Switching Speed

Key Attributes
Model Number: DMG2302UK-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
18pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
130pF@10V
Pd - Power Dissipation:
660mW
Gate Charge(Qg):
1.4nC@4.5V
Mfr. Part #:
DMG2302UK-7
Package:
SOT-23
Product Description

Product Overview

The Diodes Incorporated DMG2302UK is an N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for backlighting, power management functions, DC-DC converters, and motor control. This device features low input capacitance, fast switching speed, and an ESD protected gate. It is also totally lead-free, fully RoHS compliant, and halogen and antimony free, qualifying to AEC-Q101 standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
  • Certifications: Qualified to AEC-Q101 Standards for High Reliability
  • Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0
  • Terminals Finish: Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Moisture Sensitivity: Level 1 per J-STD-020

Technical Specifications

Characteristic Symbol Value Units Test Condition
Product Summary
Drain-Source Voltage V(BR)DSS 20 V TA = +25C
RDS(ON) Max @ VGS = 4.5V RDS(ON) Max 90 m VGS = 4.5V
ID Max @ TA = +25C ID Max 2.8 A TA = +25C
RDS(ON) Max @ VGS = 2.5V RDS(ON) Max 120 m VGS = 2.5V
ID Max @ TA = +25C ID Max 2.4 A TA = +25C
Maximum Ratings (@TA = +25C, unless otherwise specified.)
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25C ID 2.8 A VGS = 4.5V Steady State TA = +25C
Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +70C ID 2.2 A VGS = 4.5V Steady State TA = +70C
Maximum Continuous Body Diode Forward Current (Note 6) IS 1.1 A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 12 A
Thermal Characteristics
Total Power Dissipation (Note 5) PD 0.66 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 192 C/W Steady State
Total Power Dissipation (Note 6) PD 1.1 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 115 C/W Steady State
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics (@TA = +25C, unless otherwise specified.)
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current TJ = +25C IDSS 10 A VDS = 16V, VGS = 0V
Gate-Source Leakage IGSS 10 A VGS = 10V, VDS = 0V
Gate Threshold Voltage VGS(TH) 0.3 - 1.0 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance VGS = 4.5V, ID = 3.6A RDS(ON) 61 - 90 m VGS = 4.5V, ID = 3.6A
Static Drain-Source On-Resistance VGS = 2.5V, ID = 3.1A RDS(ON) 80 - 120 m VGS = 2.5V, ID = 3.1A
Diode Forward Voltage VSD 0.7 - 1.2 V VGS = 0V, IS = 1.0A
Dynamic Characteristics (Note 8)
Input Capacitance CISS 130 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance COSS 26 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance CRSS 18 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Gate Resistance RG 2.7 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) QG 1.4 nC VDS = 10V, ID = 3.6A
Total Gate Charge (VGS = 10V) QG 2.8 nC VDS = 10V, ID = 3.6A
Gate-Source Charge QGS 0.1 nC VDS = 10V, ID = 3.6A
Gate-Drain Charge QGD 0.5 nC VDS = 10V, ID = 3.6A
Turn-On Delay Time tD(ON) 0.6 ns VDS = 10V, VGS = 4.5V, RG = 1, RL = 2.78
Turn-On Rise Time tR 2.7 ns VDS = 10V, VGS = 4.5V, RG = 1, RL = 2.78
Turn-Off Delay Time tD(OFF) 4.2 ns VDS = 10V, VGS = 4.5V, RG = 1, RL = 2.78
Turn-Off Fall Time tF 1.7 ns VDS = 10V, VGS = 4.5V, RG = 1, RL = 2.78
Reverse Recovery Time tRR 5.3 ns IF = 3.6A, di/dt = 100A/s
Reverse Recovery Charge QRR 0.5 nC IF = 3.6A, di/dt = 100A/s
Mechanical Data
Case SOT23
Weight 0.009 grams (Approximate)
Ordering Information (Note 4)
Part Number DMG2302UK-7 SOT23, 3,000/Tape & Reel
Part Number DMG2302UK-13 SOT23, 10,000/Tape & Reel

1912111437_DIODES-DMG2302UK-7_C460977.pdf

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