power management device Diodes DMN3042L 7 N channel MOSFET with low on resistance and fast switching
Key Attributes
Model Number:
DMN3042L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
48mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
-
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
DMN3042L-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated DMN3042L is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including battery charging, power management functions, DC-DC converters, and portable power adaptors. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. It is a totally lead-free, fully RoHS compliant, and halogen and antimony-free "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package Type: SOT23 (Standard)
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Copper Lead-Frame
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary: V(BR)DSS | V(BR)DSS | 30 | V | @ VGS = 10V |
| Product Summary: RDS(on) max | RDS(on) max | 26.5 | m | @ VGS = 10V |
| Product Summary: ID max | ID max | 5.8 | A | @ VGS = 10V |
| Product Summary: RDS(on) max | RDS(on) max | 32 | m | @ VGS = 4.5V |
| Product Summary: ID max | ID max | 5.0 | A | @ VGS = 4.5V |
| Drain-Source Voltage | VDSS | 30 | V | @ TA = +25C unless otherwise specified. |
| Gate-Source Voltage | VGSS | 12 | V | @ TA = +25C unless otherwise specified. |
| Continuous Drain Current (Note 6) | ID | 5.8 | A | VGS = 10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 6) | ID | 4.0 | A | VGS = 10V, Steady State, TA = +70C |
| Maximum Body Diode Forward Current (Note 6) | IS | 1.5 | A | @ TA = +25C unless otherwise specified. |
| Pulsed Drain Current (10s pulse, duty cycle = 1%) | IDM | 30 | A | @ TA = +25C unless otherwise specified. |
| Power Dissipation (Note 5) | PD | 0.72 | W | @ TA = +25C unless otherwise specified. |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 171 | C/W | Steady State, @ TA = +25C |
| Power Dissipation (Note 6) | PD | 1.4 | W | @ TA = +25C unless otherwise specified. |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 93 | C/W | Steady State, @ TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | @ TA = +25C unless otherwise specified. |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 30V, VGS = 0V |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 12V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 0.6 to 1.4 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 21 to 26.5 | m | VGS = 10V, ID = 5.8A |
| Static Drain-Source On-Resistance | RDS(on) | 23 to 32 | m | VGS = 4.5V, ID = 5.0A |
| Static Drain-Source On-Resistance | RDS(on) | 29 to 48 | m | VGS = 2.5V, ID = 4.0A |
| Diode Forward Voltage | VSD | 0.7 to 1.2 | V | VGS = 0V, IS = 1A |
| Input Capacitance | Ciss | 570 to 860 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 63 to 95 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 53 to 80 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | RG | 3.2 to 4.5 | VDS = 0V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge (VGS = 10V) | Qg | 13.3 to 20 | nC | VDS = 15V, ID = 6.9A |
| Total Gate Charge (VGS = 4.5V) | Qg | 6.1 to 8 | nC | VDS = 15V, ID = 5.0A |
| Gate-Source Charge | Qgs | 1.0 to 1.5 | nC | VDS = 15V, ID = 6.9A |
| Gate-Drain Charge | Qgd | 1.6 to 2.5 | nC | VDS = 15V, ID = 6.9A |
| Turn-On Delay Time | tD(on) | 1.5 to 2.4 | nS | VGS = 10V, VDD = 15V, RG = 3, ID = 6.9A |
| Turn-On Rise Time | tr | 3.3 to 5 | nS | VGS = 10V, VDD = 15V, RG = 3, ID = 6.9A |
| Turn-Off Delay Time | tD(off) | 13.9 to 22 | nS | VGS = 10V, VDD = 15V, RG = 3, ID = 6.9A |
| Turn-Off Fall Time | tf | 4.9 to 7 | nS | VGS = 10V, VDD = 15V, RG = 3, ID = 6.9A |
| Body Diode Reverse Recovery Time | trr | 7.8 to 12 | nS | IS = 5A, dI/dt = 100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 1.9 to 3 | nC | IS = 5A, dI/dt = 100A/s |
| Package Weight (Approximate) | Weight | 0.008 | grams | SOT23 |
Ordering Information
| Part Number | Package | Packing | Qty. | Carrier |
|---|---|---|---|---|
| DMN3042L-7 | SOT23 (Standard) | Tape & Reel | 3,000 | |
| DMN3042L-13 | SOT23 (Standard) | Tape & Reel | 10,000 |
Package Outline Dimensions
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.90 | 1.15 | 1.025 |
| A1 | 0.00 | 0.10 | 0.05 |
| A2 | 0.85 | 1.10 | 0.975 |
| b | 0.30 | 0.51 | 0.40 |
| c | 0.080 | 0.202 | 0.11 |
| D | 2.80 | 3.00 | 2.90 |
| E | 2.25 | 2.55 | 2.40 |
| E1 | 1.20 | 1.40 | 1.30 |
| e | 0.89 | 1.03 | 0.915 |
| e1 | 1.78 | 2.05 | 1.83 |
| F | 0.40 | 0.60 | 0.535 |
| L1 | 0.45 | 0.61 | 0.55 |
| L | 0.25 | 0.55 | 0.40 |
| a | 0 | 8 | -- |
All Dimensions in mm
2412250959_DIODES-DMN3042L-7_C102621.pdf
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