Diodes DMN6068SE 13 60V N channel MOSFET ideal for transformer driving switches and DC DC converters
Key Attributes
Model Number:
DMN6068SE-13
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@10V;100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27.1pF
Number:
1 N-channel
Output Capacitance(Coss):
45.7pF
Input Capacitance(Ciss):
502pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.55nC@4.5V;10.3nC@10V
Mfr. Part #:
DMN6068SE-13
Package:
SOT-223
Product Description
Product Overview
The Diodes Incorporated DMN6068SEQ is a 60V N-channel enhancement mode MOSFET designed for demanding automotive applications. It meets stringent AEC-Q101 qualification standards, is PPAP capable, and manufactured in IATF 16949 certified facilities. This MOSFET offers low on-resistance and fast switching speeds, making it ideal for motor controls, transformer driving switches, DC-DC converters, power-management functions, and uninterrupted power supplies. It features 100% Unclamped Inductive Switch (UIS) testing in production and is available in a lead-free, RoHS compliant, and halogen/antimony-free "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Product Family: DMN6068SEQ
- Certifications: AEC-Q101 Qualified, PPAP Capable, IATF 16949 Certified
- Compliance: RoHS Compliant (EU Directive 2002/95/EC, 2011/65/EU, 2015/863/EU), Halogen and Antimony Free ("Green" Device)
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Lead Frame
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 60 | V | ID = 250A, VGS = 0V |
| Gate-Source Voltage | VGS | ±20 | V | |
| Single Pulsed Avalanche Energy | EAS | 37.5 | mJ | (Note 10) |
| Single Pulsed Avalanche Current | IAS | 5.0 | A | (Note 10) |
| Continuous Drain Current (VGS = 10V) | ID | 5.6 | A | TA = +25°C (Note 7) |
| Continuous Drain Current (VGS = 10V) | ID | 4.5 | A | TA = +70°C (Note 7) |
| Continuous Drain Current (VGS = 4.5V) | ID | 4.7 | A | |
| Pulsed Drain Current (VGS = 10V) | IDM | 20.8 | A | (Note 8) |
| Continuous Source Current (Body Diode) | IS | 4.9 | A | (Note 7) |
| Pulsed Source Current (Body Diode) | ISM | 20.8 | A | (Note 8) |
| Power Dissipation | PD | 2.0 | W | (Note 6) |
| Power Dissipation | PD | 3.7 | W | (Note 7) |
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | (Note 6) |
| Thermal Resistance, Junction to Ambient | RθJA | 34 | °C/W | (Note 7) |
| Thermal Resistance, Junction to Lead | RθJL | 11.5 | °C/W | (Note 9) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 3.0 | V | ID = 250µA, VDS = VGS |
| Static Drain-Source On-Resistance (VGS = 10V) | RDS(ON) | 68 | mΩ | ID = 12A (Note 11) |
| Static Drain-Source On-Resistance (VGS = 4.5V) | RDS(ON) | 100 | mΩ | ID = 6A (Note 11) |
| Package | SOT223 | |||
| Weight | 0.112 | grams (Approximate) |
2412251026_DIODES-DMN6068SE-13_C209902.pdf
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