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quality 40V N channel MOSFET DIODES DMTH4007LPSQ 13 with PPAP capability and thermally PowerDI5060 8 package factory
quality 40V N channel MOSFET DIODES DMTH4007LPSQ 13 with PPAP capability and thermally PowerDI5060 8 package factory

40V N channel MOSFET DIODES DMTH4007LPSQ 13 with PPAP capability and thermally PowerDI5060 8 package

Key Attributes
Model Number: DMTH4007LPSQ-13
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20.9pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
485pF
Input Capacitance(Ciss):
1.895nF@30V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
29.1nC@10V
Mfr. Part #:
DMTH4007LPSQ-13
Package:
PowerDI5060-8
Product Description

Product Overview

The DMTH4007LPSQ is a 40V N-channel enhancement mode MOSFET designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified and PPAP capable, making it ideal for motor controls, DC-DC converters, and load switches. This MOSFET offers high conversion efficiency, low RDS(ON) for minimized on-state losses, and a fast switching speed. Its ability to operate at rated temperatures up to +175C makes it suitable for high ambient temperature environments. The device is also 100% Unclamped Inductive Switching (UIS) tested for enhanced reliability and robustness, and features a thermally efficient PowerDI5060-8 package with a low profile (<1.1mm) for thin applications. It is lead-free, RoHS compliant, and a "Green" device, free from Halogen and Antimony.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Series: DMTH4007LPSQ
  • Package Type: PowerDI5060-8
  • Material: Molded Plastic, "Green" Molding Compound
  • Flammability Classification: UL 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals Finish: Matte Tin Annealed over Copper Leadframe
  • Compliance: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Automotive Qualification: AEC-Q101 Qualified, PPAP Capable, manufactured in IATF 16949 certified facilities

Technical Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage BVDSS 40 V VGS = 0, ID = 1mA
Gate-Source Voltage VGSS 20 V
Continuous Drain Current, VGS = 10V ID 85 A TC = +25C (Note 6)
Continuous Drain Current, VGS = 4.5V ID 70 A TC = +25C (Note 6)
Static Drain-Source On-Resistance RDS(ON) 6.5 m VGS = 10V, ID = 20A (Note 7)
Static Drain-Source On-Resistance RDS(ON) 9.8 m VGS = 4.5V, ID = 20A (Note 7)
Gate Threshold Voltage VGS(th) 1 - 3 V VDS = VGS, ID = 250A
Max Continuous Body Diode Forward Current IS 85 A (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 340 A
Avalanche Current, L = 0.1mH IAS 20 A
Avalanche Energy, L = 0.1mH EAS 20 mJ
Total Power Dissipation PD 83.3 W TC = +25C (Note 6)
Thermal Resistance, Junction to Case RJC 1.8 C/W (Note 6)
Operating and Storage Temperature Range TJ, TSTG -55 to +175 C
Package Material Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0
Terminals Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208
Weight 0.097 grams (Approximate)
Package Dimensions D 5.15 BSC mm
Package Dimensions E 6.15 BSC mm

2412251050_DIODES-DMTH4007LPSQ-13_C3289394.pdf

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