Vertical DMOS FET P Channel Enhancement Mode DIODES ZVP3306A with High Pulsed Drain Current and Low On State Resistance
Product Overview
This P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET is designed for various applications requiring a 60 Volt VDS rating and a low on-state resistance of 14. It offers a continuous drain current of -160 mA at 25C ambient temperature and a pulsed drain current capability of -1.6 A. The device operates within a wide temperature range of -55 to +150 C, making it suitable for demanding environments. Key electrical characteristics include a Drain-Source Breakdown Voltage of -60 V and a Gate-Source Threshold Voltage ranging from -1.5 V to -3.5 V. The FET features low input capacitance (Ciss: 50 pF), output capacitance (Coss: 25 pF), and reverse transfer capacitance (Crss: 8 pF), along with fast switching times (td(on), tr, td(off), tf: 8 ns each).
Product Attributes
- Type: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
- Package Compatibility: E-Line TO92 Compatible
- Issue Date: March 94
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | |
| On-State Drain-Source Resistance | RDS(on) | 14 | VGS=-10V, ID=-200mA | |
| Continuous Drain Current at Tamb=25C | ID | -160 | mA | |
| Pulsed Drain Current | IDM | -1.6 | A | |
| Gate Source Voltage | VGS | 20 | V | |
| Power Dissipation at Tamb=25C | Ptot | 625 | mW | |
| Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-1mA, VGS=0V |
| Gate-Source Threshold Voltage | VGS(th) | -1.5 to -3.5 | V | ID=-1mA, VDS= VGS |
| Gate-Body Leakage | IGSS | 20 | nA | VGS= 20V, VDS=0V |
| Zero Gate Voltage Drain Current | IDSS | -0.5 to -50 | A | VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125C(2) |
| On-State Drain Current(1) | ID(on) | -400 | mA | VDS=-18 V, VGS=-10V |
| Static Drain-Source On-State Resistance(1) | RDS(on) | 14 | VGS=-10V,ID=-200mA | |
| Forward Transconductance(1)(2) | gfs | 60 | mS | VDS=-18V,ID=-200mA |
| Input Capacitance(2) | Ciss | 50 | pF | VDS=-18V, VGS=0V, f=1MHz |
| Common Source Output Capacitance(2) | Coss | 25 | pF | VDS=-18V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance(2) | Crss | 8 | pF | VDS=-18V, VGS=0V, f=1MHz |
| Turn-On Delay Time(2)(3) | td(on) | 8 | ns | VDD -18V, ID=-200mA |
| Rise Time(2)(3) | tr | 8 | ns | VDD -18V, ID=-200mA |
| Turn-Off Delay Time(2)(3) | td(off) | 8 | ns | VDD -18V, ID=-200mA |
| Fall Time(2)(3) | tf | 8 | ns | VDD -18V, ID=-200mA |
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
1809172038_DIODES-ZVP3306A_C211372.pdf
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