Low Profile 3A 40V Surface Mounted Schottky Barrier Rectifiers DOWO DSK34 with RoHS and Halogen Free
Key Attributes
Model Number:
DSK34
Product Custom Attributes
Reverse Leakage Current (Ir):
500uA@40V
Non-Repetitive Peak Forward Surge Current:
65A
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
DSK34
Package:
SOD-123FL
Product Description
Product Overview
3A, 20~200V Surface Mounted Schottky Barrier Rectifiers designed for automated placement with low profile and high efficiency. Features include guardring for overvoltage protection, low power losses, and high forward surge capability. Compliant with RoHS standards and halogen-free.
Product Attributes
- Brand: dowosemi
- Certifications: RoHS standards, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | DSK32 | DSK33 | DSK34 | DSK35 | DSK36 | DSK38 | DSK310 | DSK315 | DSK320 |
| Repetitive peak reverse voltage | VRRM | V | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 |
| Average rectified output current @60Hz sine wave, Resistance load, Ta (FIG.1) | IO | A | 3.0 | ||||||||
| Surge(non-repetitive)forward current @60Hz half-sine wave,1 cycle, Tj=25 | IFSM | A | 65 | ||||||||
| Storage temperature | Tstg | -55 ~+150 | |||||||||
| Junction temperature | Tj | -55 ~+175 | |||||||||
| Typical Junction Capacitance measured at 1MHz and Applied on 4.0VD.C | Cj | pF | 165 | ||||||||
| Maximum instantaneous forward voltage drop per diode | VF | V | 0.5 | 0.55 | 0.70 | 0.85 | 0.95 | 1.0 | 1.2 | 1.5 | 2.0 |
| Maximum DC reverse current at rated DC blocking voltage per diode @ VRM=VRRM | IRRM | mA | 0.1 | 0.2 | 0.4 | 0.6 | 0.8 | 1.0 | 1.2 | 1.5 | 2.0 |
2408021500_DOWO-DSK34_C37635178.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
