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quality High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current factory
quality High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current factory
quality High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current factory

High power switching triac DIODES T4M35T600B with 600 volt blocking voltage and 4 ampere on state RMS current

Key Attributes
Model Number: T4M35T600B
Product Custom Attributes
Mfr. Part #:
T4M35T600B
Product Description

Product Overview

The T4M35T600B(LS) is a Triac, a silicon bidirectional thyristor designed for high-power switching applications. It offers a blocking voltage of up to 600V and an on-state current rating of 4.0 Amperes RMS at +100C. Key features include high immunity to dv/dt, high surge current capability, and operational in three quadrants (Q1, Q2, and Q3). This device minimizes the need for snubber networks, simplifying circuit design. It is RoHS compliant and a "Green" device, indicating it is Halogen and Antimony free.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: Triacs / Silicon Bidirectional Thyristors
  • Material: Molded Plastic, "Green" Molding Compound
  • Color: "Green" Device
  • Certifications: RoHS Compliant, Halogen and Antimony Free

Technical Specifications

ParameterSymbolValueUnitConditions
Peak repetitive off-state voltageVDRM / VRRM600VoltsTJ = -40 to +125C, sine wave, 50 to 60Hz; gate open
On-stage RMS currentIT(RMS)4.0Amperesfull sine wave 50 to 60Hz, TC = +100C
Peak non-repetitive surge currentITSM40Ampsone full cycle 60Hz, TJ = +25C
Circuit fusing considerationI2t6.6A2st = 8.3ms
Operating junction temperature rangeTJ-40 to +125C
Storage temperature rangeTSTG-40 to +150C
Peak repetitive forward or reverse blocking currentIDRM / IRRM0.01 / 2.0mAVAK = rated VDRM and VRRM, gate open; TJ = +25C / +125C
Peak forward on-state voltageVTM1.6VoltsITM = 4A @ tP 2.0ms, duty cycle 2%
Gate trigger currentIGT1 / IGT2 / IGT335mAVD = 12V, RL = 100
Gate trigger voltageVGT1 / VGT2 / VGT31.3VoltsVD = 12V, RL = 100
Holding currentIH35mAVD = 12V, initiation current = 200mA, gate open
Latching currentIL1 / IL2 / IL360 / 80 / 60mAVD = 12V, IG = 35mA
Critical rate of rise of Commutation voltagedv/dt500V/sVD = 67% rated VDRM, exponential waveform, gate open; TJ = +125C

2412251013_DIODES-T4M35T600B_C17640522.pdf

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