N channel enhancement mode mosfet DIODES DMG6968U 7 with rohs compliance and esd protection up to 2kV
Key Attributes
Model Number:
DMG6968U-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Output Capacitance(Coss):
91pF
Input Capacitance(Ciss):
151pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
DMG6968U-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated DMG6968U is an N-Channel Enhancement Mode MOSFET designed for efficient power management. It features low on-resistance at various gate-source voltages (25m @ VGS = 4.5V, 29m @ VGS = 2.5V, 36m @ VGS = 1.8V), low input capacitance, and fast switching speeds. This device offers low input/output leakage and is ESD protected up to 2kV. It is a totally lead-free, fully RoHS compliant, and Halogen and Antimony free ('Green' Device). For automotive applications, a specific automotive-grade part (DMG6968UQ) is available and qualified to JEDEC standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Type Marking Code: 2N4
- Compliance: RoHS, Halogen and Antimony Free ('Green' Device)
- Case Material: Molded Plastic, 'Green' Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Copper Leadframe
- Automotive Grade Available: DMG6968UQ
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | VGS = 0V |
| Gate-Source Voltage | VGSS | ±12 | V | |
| Continuous Drain Current | ID | 6.5 | A | TA = +25°C (Note 5) |
| 5.2 | A | TA = +70°C (Note 5) | ||
| Pulsed Drain Current | IDM | 30 | A | |
| Power Dissipation | PD | 1.3 | W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RθJA | 157 | °C/W | @ TA = +25°C (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | µA | VDS = 20V, VGS = 0V, TJ = +25°C |
| Gate-Source Leakage | IGSS | ±10 | µA | VGS = ±10V, VDS = 0V |
| Gate-Source Breakdown Voltage | BVSGS | ±12 | V | VDS = 0V, IG = ±250µA |
| Gate Threshold Voltage | VGS(TH) | 0.5 to 0.9 | V | VDS = VGS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS = 4.5V, ID = 6.5A |
| 29 | mΩ | VGS = 2.5V, ID = 5.5A | ||
| 36 | mΩ | VGS = 1.8V, ID = 3.5A | ||
| Forward Transfer Admittance | |Yfs| | 8 | S | VDS = 10V, ID = 5A |
| Input Capacitance | Ciss | 151 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 91 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 32 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 8.5 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A |
| Gate-Source Charge | Qgs | 1.6 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A |
| Gate-Drain Charge | Qgd | 2.8 | nC | VGS = 4.5V, VDS = 10V, ID = 6.5A |
| Turn-On Delay Time | tD(ON) | 54 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A |
| Turn-On Rise Time | tR | 66 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A |
| Turn-Off Delay Time | tD(OFF) | 613 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A |
| Turn-Off Fall Time | tF | 205 | ns | VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A |
| Case | SOT23 | |||
| Weight | 0.008 | grams (Approximate) | ||
| ESD Protected Up To | 2 | kV | ||
| Ordering Information | Part Number | DMG6968U-7 | SOT23, 3000/Tape & Reel |
2412251003_DIODES-DMG6968U-7_C150759.pdf
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