86--136 6733 2386
quality Plastic MiniMELF Package DIOTEC EGL34D Superfast Recovery Rectifier Diode High Frequency Application factory
quality Plastic MiniMELF Package DIOTEC EGL34D Superfast Recovery Rectifier Diode High Frequency Application factory

Plastic MiniMELF Package DIOTEC EGL34D Superfast Recovery Rectifier Diode High Frequency Application

Key Attributes
Model Number: EGL34D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
10A
Reverse Leakage Current (Ir):
5uA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-50℃~+175℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1.25V@500mA
Current - Rectified:
500mA
Mfr. Part #:
EGL34D
Package:
DO-213AA
Product Description

Product Overview

The EGL34A through EGL34G series are Superfast Recovery SMD Rectifier Diodes designed for rectification of higher frequencies and high-speed switching applications. These diodes offer a high power dissipation and are compliant with RoHS, REACH, and Conflict Minerals regulations. They are housed in a Plastic MiniMELF package compatible with SOD-87.

Product Attributes

  • Brand: Diotec Semiconductor AG
  • Package: Plastic MiniMELF (DO-213AA)
  • Certifications: Compliant to RoHS, REACH, Conflict Minerals
  • Marking: Green ring denotes cathode and superfast switching rectifier family; colored ring denotes repetitive peak reverse voltage.
  • Taping: Taped and reeled (2500 / 7")
  • Case Material: UL 94V-0

Technical Specifications

Type Repetitive Peak Reverse Voltage (VRRM) [V] Surge Peak Reverse Voltage (VRSM) [V] Reverse Recovery Time (trr) [ns] Forward Voltage (VF) [V] at IF = 0.5 A Leakage Current (IR) [A] at VR = VRRM, Tj = 25C Leakage Current (IR) [A] at VR = VRRM, Tj = 125C Junction Capacitance (Cj) [pF] at VR = 4 V Max. Average Forward Rectified Current (IFAV) [A] at TT = 75C Peak Forward Surge Current (IFSM) [A] TA = 25C (50/60 Hz half sine-wave) Rating for Fusing (i2t) [As] t < 10 ms, TA = 25C Junction Temperature (Tj) [C] Storage Temperature (TS) [C] Thermal Resistance (RthA) [K/W] Thermal Resistance (RthT) [K/W]
EGL34A 50 50 (gray) < 50 < 1.25 < 5 < 50 4 0.5 8.5/10 0.5 -50...+175 -50...+175 < 150 < 70
EGL34B 100 100 (red) < 50 < 1.25 < 5 < 50 4 0.5 8.5/10 0.5 -50...+175 -50...+175 < 150 < 70
EGL34D 200 200 (orange) < 50 < 1.25 < 5 < 50 4 0.5 8.5/10 0.5 -50...+175 -50...+175 < 150 < 70
EGL34G 400 400 (yellow) < 50 < 1.35 < 5 < 50 4 0.5 8.5/10 0.5 -50...+175 -50...+175 < 150 < 70

Dimensions: [mm]
(Refer to datasheet for specific dimensions diagram)

Weight: approx. 0.04 g

Solder & assembly conditions: 260C/10s, MSL = 1

Typical Applications: Rectification of higher frequencies, High speed switching, Commercial grade.


2411220426_DIOTEC-EGL34D_C17406750.pdf

Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.