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quality Fast Switching Speed Complementary Pair MOSFET Diodes DMC2400UV-7 Ideal for Battery Operated Systems factory
quality Fast Switching Speed Complementary Pair MOSFET Diodes DMC2400UV-7 Ideal for Battery Operated Systems factory

Fast Switching Speed Complementary Pair MOSFET Diodes DMC2400UV-7 Ideal for Battery Operated Systems

Key Attributes
Model Number: DMC2400UV-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.03A;700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
480mΩ@5V,200mA
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
37.1pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
500pC@4.5V
Mfr. Part #:
DMC2400UV-7
Package:
SOT-563
Product Description

Product Overview

The DMC2400UV is a new generation complementary pair of N-channel and P-channel enhancement mode MOSFETs designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, battery-operated systems, and solid-state relays. Key features include low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and an ultra-small surface mount package. It is also ESD protected, totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a "Green" device.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: Complementary Pair Enhancement Mode MOSFET
  • Package: SOT563
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • ESD Protection: Protected Gate

Technical Specifications

Specification N-Channel (Q1) P-Channel (Q2) Unit
Device DMC2400UV DMC2400UV
BVDSS 20 -20 V
RDS(ON) Max @ VGS = 4.5V 0.5 1.0 @ VGS = 4.5V (Q1) / -4.5V (Q2)
RDS(ON) Max @ VGS = 1.8V 0.9 2.0 @ VGS = 1.8V (Q1) / -1.8V (Q2)
ID Max @ TA = +25C (VGS = 4.5V) 1030 -700 mA
ID Max @ TA = +25C (VGS = 1.8V) 740 -460 mA
Gate Threshold Voltage (VGS(TH)) <1 V
Case Material Molded Plastic, "Green" Molding Compound
Moisture Sensitivity Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe
Weight 0.003 grams (Approximate)
Ordering Information DMC2400UV-7 SOT563, 3000/Tape & Reel
Ordering Information DMC2400UV-7B SOT563, 8000/Tape & Reel
Ordering Information DMC2400UV-13 SOT563, 10000/Tape & Reel
Drain-Source Breakdown Voltage (BVDSS) 20 V (VGS = 0V, ID = 1mA) -20 V (VGS = 0V, ID = -1mA) V
Static Drain-Source On-Resistance (RDS(ON)) 0.3 - 0.48 (VGS = 5.0V, ID = 200mA) 0.67 - 0.97 (VGS = -5V, ID = -100mA)
Gate Threshold Voltage (VGS(TH)) 0.5 - 0.9 V (VDS = VGS, ID = 250A) -0.5 - -1.0 V (VDS = VGS, ID = -250A) V
Input Capacitance (Ciss) 37.1 pF (VDS = 10V, VGS = 0V, f = 1.0MHz) 46.1 pF (VDS = -10V, VGS = 0V, f = 1.0MHz) pF
Total Gate Charge (Qg) 0.5 nC (VGS = 4.5V, VDS = 10V, ID = 250mA) 0.5 nC (VGS = -4.5V, VDS = -10V, ID = -250mA) nC
Total Power Dissipation (PD) 0.45 W (Note 6) W
Thermal Resistance (RJA) 281 C/W (Note 6) C/W

2412251014_DIODES-DMC2400UV-7_C177025.pdf

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