Durable Molded Plastic Case Diodes DMN2056U 7 N Channel Enhancement Mode MOSFET for Power Management

Key Attributes
Model Number: DMN2056U-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 N-channel
Output Capacitance(Coss):
47pF
Input Capacitance(Ciss):
339pF
Pd - Power Dissipation:
940mW
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
DMN2056U-7
Package:
SOT-23
Product Description

Diodes Incorporated DMN2056U 20V N-Channel Enhancement Mode MOSFET

Product Overview

The Diodes Incorporated DMN2056U is a 20V N-channel enhancement mode MOSFET designed to offer low on-state resistance (RDS(on)) and superior switching performance. This makes it an ideal component for high-efficiency power management applications, including battery charging, power management functions, DC-DC converters, and portable power adaptors. It features low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Case Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe
  • Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Certifications: Qualified to JEDEC standards for High Reliability.
  • Automotive Note: For automotive applications, refer to the related automotive grade (Q-suffix) part.

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250A
Gate Threshold Voltage VGS(th) 0.4 - 1.0 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(on) 30 (Typ), 38 (Max) m VGS = 4.5V, ID = 3.6A
34 (Typ), 45 (Max) m VGS = 2.5V, ID = 3.1A
52 (Typ), 85 (Max) m VGS = 1.5V, ID = 2.0A
Continuous Drain Current (TA = +25C) ID 4.0 A VGS = 4.5V, Steady State
Continuous Drain Current (TA = +70C) ID 3.2 A VGS = 4.5V, Steady State
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM 22 A
Body Diode Forward Current (Note 6) IS 1.0 A
Power Dissipation (Note 5) PD 0.66 W Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
Power Dissipation (Note 6) PD 0.94 W Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
Thermal Resistance, Junction to Ambient (Note 5) RJA 192 C/W Steady State
Thermal Resistance, Junction to Ambient (Note 6) RJA 136 C/W Steady State
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Input Capacitance Ciss 339 (Typ) pF VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 47 (Typ) pF VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 34 (Typ) pF VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg 4.3 (Typ) nC VDS = 10V, VGS = 4.5V, ID = 3.6A
Weight 0.009 (Approximate) grams

Ordering Information

Part Number Case Packaging
DMN2056U-7 SOT23 (Standard) 3000/Tape & Reel
DMN2056U-13 SOT23 (Standard) 10000/Tape & Reel

Package Outline Dimensions (SOT23 Standard)

Dim Min Max Typ
A0.901.151.025
A10.000.100.05
A20.851.100.975
b0.300.510.40
c0.0800.2020.11
D2.803.002.90
E2.252.552.40
E11.201.401.30
e0.891.030.915
e11.782.051.83
F0.400.600.535
L10.450.610.55
L0.250.550.40
a08--

All Dimensions in mm


2412251050_DIODES-DMN2056U-7_C332302.pdf

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