Durable Molded Plastic Case Diodes DMN2056U 7 N Channel Enhancement Mode MOSFET for Power Management
Diodes Incorporated DMN2056U 20V N-Channel Enhancement Mode MOSFET
Product Overview
The Diodes Incorporated DMN2056U is a 20V N-channel enhancement mode MOSFET designed to offer low on-state resistance (RDS(on)) and superior switching performance. This makes it an ideal component for high-efficiency power management applications, including battery charging, power management functions, DC-DC converters, and portable power adaptors. It features low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Case Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Certifications: Qualified to JEDEC standards for High Reliability.
- Automotive Note: For automotive applications, refer to the related automotive grade (Q-suffix) part.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A |
| Gate Threshold Voltage | VGS(th) | 0.4 - 1.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 30 (Typ), 38 (Max) | m | VGS = 4.5V, ID = 3.6A |
| 34 (Typ), 45 (Max) | m | VGS = 2.5V, ID = 3.1A | ||
| 52 (Typ), 85 (Max) | m | VGS = 1.5V, ID = 2.0A | ||
| Continuous Drain Current (TA = +25C) | ID | 4.0 | A | VGS = 4.5V, Steady State |
| Continuous Drain Current (TA = +70C) | ID | 3.2 | A | VGS = 4.5V, Steady State |
| Pulsed Drain Current (10s pulse, duty cycle = 1%) | IDM | 22 | A | |
| Body Diode Forward Current (Note 6) | IS | 1.0 | A | |
| Power Dissipation (Note 5) | PD | 0.66 | W | Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. |
| Power Dissipation (Note 6) | PD | 0.94 | W | Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 192 | C/W | Steady State |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 136 | C/W | Steady State |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Input Capacitance | Ciss | 339 (Typ) | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 47 (Typ) | pF | VDS = 0V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 34 (Typ) | pF | VDS = 0V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 4.3 (Typ) | nC | VDS = 10V, VGS = 4.5V, ID = 3.6A |
| Weight | 0.009 (Approximate) | grams |
Ordering Information
| Part Number | Case | Packaging |
|---|---|---|
| DMN2056U-7 | SOT23 (Standard) | 3000/Tape & Reel |
| DMN2056U-13 | SOT23 (Standard) | 10000/Tape & Reel |
Package Outline Dimensions (SOT23 Standard)
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.90 | 1.15 | 1.025 |
| A1 | 0.00 | 0.10 | 0.05 |
| A2 | 0.85 | 1.10 | 0.975 |
| b | 0.30 | 0.51 | 0.40 |
| c | 0.080 | 0.202 | 0.11 |
| D | 2.80 | 3.00 | 2.90 |
| E | 2.25 | 2.55 | 2.40 |
| E1 | 1.20 | 1.40 | 1.30 |
| e | 0.89 | 1.03 | 0.915 |
| e1 | 1.78 | 2.05 | 1.83 |
| F | 0.40 | 0.60 | 0.535 |
| L1 | 0.45 | 0.61 | 0.55 |
| L | 0.25 | 0.55 | 0.40 |
| a | 0 | 8 | -- |
All Dimensions in mm
2412251050_DIODES-DMN2056U-7_C332302.pdf
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