Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and level shift applications
Key Attributes
Model Number:
BSS127S-7
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
70mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
160Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
21.8pF@25V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
1.08nC@10V
Mfr. Part #:
BSS127S-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated BSS127 is a new generation N-channel enhancement mode Field-Effect MOSFET utilizing advanced planar technology. It offers excellent high voltage and fast switching capabilities, making it ideal for small-signal and level shift applications. This device is designed for applications such as motor control, backlighting, DC-DC converters, and power management functions. Key features include low input capacitance, a high BVDSS rating for power applications, and low input/output leakage. The BSS127 is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, and designated as a Green Device.
Product Attributes
- Brand: Diodes Incorporated
- Technology: Advanced Planar Technology
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Automotive Grade: Available (Q-suffix part, AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facilities). Refer to related automotive grade for specific requirements.
- Reliability: Qualified to JEDEC standards (as referenced in AEC-Q101) for High Reliability.
- Case Material: Molded Plastic Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Solderability: Solderable per MIL-STD-202, Method 208
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | BVDSS | 600 | V | TA = +25C |
| On-Resistance (Max) | RDS(ON) | 160 | VGS = 10V @ VGS = 10V | |
| Continuous Drain Current (Max) | ID | 70 | mA | VGS = 10V, TA = +25C (Note 6) |
| Mechanical Data | ||||
| Weight | - | 0.008 | grams (Approximate) | - |
| Ordering Information | ||||
| Part Number | Case | Packaging | - | - |
| BSS127SSN-7 | SC59 | 3000/Tape & Reel | - | - |
| BSS127S-7 | SOT23 | 3000/Tape & Reel | - | - |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 600 | V | - |
| Gate-Source Voltage | VGSS | 20 | V | - |
| Continuous Drain Current (Note 5) | ID | 50 | mA | VGS = 10V, TA = +25C |
| Continuous Drain Current (Note 6) | ID | 70 | mA | VGS = 10V, TA = +25C |
| Pulsed Drain Current (Note 7) | IDM | 0.16 | A | @ TSP = +25C |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 0.61 | W | @ TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 204 | C/W | @ TA = +25C |
| Power Dissipation (Note 6) | PD | 1.25 | W | @ TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 100 | C/W | @ TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | - |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 0.1 | A | VDS = 600V, VGS = 0V, TJ = +25C |
| Gate-Body Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 3 to 4.5 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 80 to 160 | VGS = 10V, ID = 16mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 95 to 190 | VGS = 5.0V, ID = 16mA | |
| Forward Transfer Admittance | |Yfs| | 76 | mS | VDS = 10V, ID = 16mA |
| Diode Forward Voltage | VSD | 1.5 | V | VGS = 0V, IS = 16mA |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 21.8 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 2.2 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 0.3 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 1.08 | nC | VGS = 10V, VDD = 300V, ID = 0.01A |
| Gate-Source Charge | Qgs | 0.08 | - | VGS = 10V, VDD = 300V, ID = 0.01A |
| Gate-Drain Charge | Qgd | 0.50 | - | VGS = 10V, VDD = 300V, ID = 0.01A |
| Turn-On Delay Time | tD(ON) | 5.0 | ns | VDD = 300V, VGS = 10V, RGEN = 6, ID = 10mA |
| Turn-On Rise Time | tR | 7.2 | ns | VDD = 300V, VGS = 10V, RGEN = 6, ID = 10mA |
| Turn-Off Delay Time | tD(OFF) | 28.7 | ns | VDD = 300V, VGS = 10V, RGEN = 6, ID = 10mA |
| Turn-Off Fall Time | tF | 168 | ns | VDD = 300V, VGS = 10V, RGEN = 6, ID = 10mA |
| Reverse Recovery Time | tRR | 131 | ns | VR =300V, IF =0.016A, di/dt = 100A/s |
| Reverse Recovery Charge | QRR | 32 | - | VR =300V, IF =0.016A, di/dt = 100A/s |
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.
2412251006_DIODES-BSS127S-7_C154890.pdf
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