Low Gate Threshold Voltage Complementary Pair MOSFET DIODES DMC2990UDJQ-7 Ideal for Power Management
Product Overview
The DMC2990UDJQ is a complementary pair of enhancement mode MOSFETs designed to meet the stringent requirements of automotive applications. Qualified to AEC-Q101 standards and supported by PPAP, these MOSFETs are ideal for general-purpose interfacing switches, power management functions, and analog switches. Key features include low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speed, and an ultra-small surface mount package with a low profile. The device is ESD protected, totally lead-free, fully RoHS compliant, and halogen and antimony-free, classifying it as a 'Green' device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Complementary Pair Enhancement Mode MOSFET
- Automotive Qualified: AEC-Q101
- PPAP Capable: Yes
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ('Green' Device)
- ESD Protection: Yes
- Package Material: Molded Plastic, "Green" Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Q1 (N-Channel) Value | Q2 (P-Channel) Value | Unit | Test Condition |
|---|---|---|---|---|---|
| Product Summary | |||||
| BVDSS | BVDSS | 20V | -20V | V | TA = +25C |
| RDS(ON) Max @ VGS = 4.5V | RDS(ON) | 0.99 | 1.9 | TA = +25C | |
| ID Max @ TA = +25C | ID | 450mA | -310mA | mA | TA = +25C |
| Maximum Ratings | |||||
| Drain-Source Voltage | VDSS | 20 | -20 | V | @TA = +25C, unless otherwise specified |
| Gate-Source Voltage | VGSS | 8 | 8 | V | @TA = +25C, unless otherwise specified |
| Continuous Drain Current (Note 6) VGS = 4.5V Steady State | ID | 450 (TA = +25C) / 350 (TA = +70C) | -310 (TA = +25C) / -240 (TA = +70C) | mA | Steady State, TA = +25C / +70C |
| Pulsed Drain Current | IDM | 800 | -800 | mA | (Note 7) |
| Thermal Characteristics | |||||
| Total Power Dissipation (Note 6) | PD | 350 | 350 | mW | @TA = +25C, unless otherwise specified |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | ||
| Electrical Characteristics (N-Channel) | |||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | - | V | VGS = 0V, ID = 250A |
| Gate Threshold Voltage | VGS(TH) | 0.4 - 1.0 | - | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 0.60 (Typ), 0.99 (Max) @ VGS = 4.5V, ID = 100mA | - | @TA = +25C | |
| Input Capacitance | Ciss | 27.6 (Typ) | - | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Electrical Characteristics (P-Channel) | |||||
| Drain-Source Breakdown Voltage | BVDSS | - | -20 | V | VGS = 0V, ID = -250A |
| Gate Threshold Voltage | VGS(TH) | - | -0.4 - -1.0 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | - | 1.2 (Typ), 1.9 (Max) @ VGS = -4.5V, ID = -100mA | @TA = +25C | |
| Input Capacitance | Ciss | - | 28.7 (Typ) | pF | VDS = -15V, VGS = 0V, f = 1.0MHz |
| Mechanical Data | |||||
| Case | SOT963 | ||||
| Weight (Approximate) | 0.027 | grams | |||
| Package Outline Dimensions (mm) | |||||
| Dimension | Min | Max | Typ | ||
| A | 0.40 | 0.50 | 0.45 | ||
| A1 | 0.00 | 0.05 | -- | ||
| b | 0.10 | 0.20 | 0.15 | ||
| c | 0.120 | 0.180 | 0.150 | ||
| D | 0.95 | 1.05 | 1.00 | ||
| E | 0.95 | 1.05 | 1.00 | ||
| E1 | 0.75 | 0.85 | 0.80 | ||
| e | -- | -- | 0.35 | ||
| e1 | -- | -- | 0.70 | ||
| L1 | 0.05 | 0.15 | 0.10 | ||
| Ordering Information | |||||
| Part Number | Case | Packaging | |||
| DMC2990UDJQ-7 | SOT963 | 10K/Tape & Reel | |||
| DMC2990UDJQ-7B | SOT963 | 10K/Tape & Reel | |||
2412251047_DIODES-DMC2990UDJQ-7_C3033299.pdf
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