Low Gate Threshold Voltage Complementary Pair MOSFET DIODES DMC2990UDJQ-7 Ideal for Power Management

Key Attributes
Model Number: DMC2990UDJQ-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
450mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
990mΩ@4.5V,100mA;1.9Ω@4.5V,100mA
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.8pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
4pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
27.6pF
Gate Charge(Qg):
500pC@4.5V
Mfr. Part #:
DMC2990UDJQ-7
Package:
SOT-963
Product Description

Product Overview

The DMC2990UDJQ is a complementary pair of enhancement mode MOSFETs designed to meet the stringent requirements of automotive applications. Qualified to AEC-Q101 standards and supported by PPAP, these MOSFETs are ideal for general-purpose interfacing switches, power management functions, and analog switches. Key features include low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speed, and an ultra-small surface mount package with a low profile. The device is ESD protected, totally lead-free, fully RoHS compliant, and halogen and antimony-free, classifying it as a 'Green' device.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: Complementary Pair Enhancement Mode MOSFET
  • Automotive Qualified: AEC-Q101
  • PPAP Capable: Yes
  • Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ('Green' Device)
  • ESD Protection: Yes
  • Package Material: Molded Plastic, "Green" Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Q1 (N-Channel) Value Q2 (P-Channel) Value Unit Test Condition
Product Summary
BVDSS BVDSS 20V -20V V TA = +25C
RDS(ON) Max @ VGS = 4.5V RDS(ON) 0.99 1.9 TA = +25C
ID Max @ TA = +25C ID 450mA -310mA mA TA = +25C
Maximum Ratings
Drain-Source Voltage VDSS 20 -20 V @TA = +25C, unless otherwise specified
Gate-Source Voltage VGSS 8 8 V @TA = +25C, unless otherwise specified
Continuous Drain Current (Note 6) VGS = 4.5V Steady State ID 450 (TA = +25C) / 350 (TA = +70C) -310 (TA = +25C) / -240 (TA = +70C) mA Steady State, TA = +25C / +70C
Pulsed Drain Current IDM 800 -800 mA (Note 7)
Thermal Characteristics
Total Power Dissipation (Note 6) PD 350 350 mW @TA = +25C, unless otherwise specified
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics (N-Channel)
Drain-Source Breakdown Voltage BVDSS 20 - V VGS = 0V, ID = 250A
Gate Threshold Voltage VGS(TH) 0.4 - 1.0 - V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) 0.60 (Typ), 0.99 (Max) @ VGS = 4.5V, ID = 100mA - @TA = +25C
Input Capacitance Ciss 27.6 (Typ) - pF VDS = 15V, VGS = 0V, f = 1.0MHz
Electrical Characteristics (P-Channel)
Drain-Source Breakdown Voltage BVDSS - -20 V VGS = 0V, ID = -250A
Gate Threshold Voltage VGS(TH) - -0.4 - -1.0 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS(ON) - 1.2 (Typ), 1.9 (Max) @ VGS = -4.5V, ID = -100mA @TA = +25C
Input Capacitance Ciss - 28.7 (Typ) pF VDS = -15V, VGS = 0V, f = 1.0MHz
Mechanical Data
Case SOT963
Weight (Approximate) 0.027 grams
Package Outline Dimensions (mm)
Dimension Min Max Typ
A 0.40 0.50 0.45
A1 0.00 0.05 --
b 0.10 0.20 0.15
c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
e -- -- 0.35
e1 -- -- 0.70
L1 0.05 0.15 0.10
Ordering Information
Part Number Case Packaging
DMC2990UDJQ-7 SOT963 10K/Tape & Reel
DMC2990UDJQ-7B SOT963 10K/Tape & Reel

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