Low gate threshold voltage DIODES DMP3099L 13 P channel MOSFET for DC DC converters and backlighting

Key Attributes
Model Number: DMP3099L-13
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
99mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
-
Output Capacitance(Coss):
48pF
Input Capacitance(Ciss):
563pF
Pd - Power Dissipation:
1.08W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
DMP3099L-13
Package:
SOT-23
Product Description

Product Overview

The DMP3099L is a P-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including backlighting, general power management functions, and DC-DC converters. Key features include low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is Totally Lead-Free & Fully RoHS compliant and is a "Green" device, free from Halogen and Antimony.

Product Attributes

  • Brand: Diodes Incorporated
  • Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free (Green Device)
  • Material: Molded Plastic, Green Molding Compound
  • Certifications: UL Flammability Classification Rating 94V-0, Moisture Sensitivity: Level 1 per J-STD-020
  • Origin: Not explicitly stated, but Diodes Incorporated is a global manufacturer.

Technical Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage V(BR)DSS -30 V TA = +25C
RDS(on) max @ VGS = -10V RDS(on) 65 m VGS = -10V, ID = -3.8A
RDS(on) max @ VGS = -4.5V RDS(on) 99 m VGS = -4.5V, ID = -3.0A
ID max TA = +25C ID -3.8 A TA = +25C
ID max TA = +70C ID -2.9 A TA = +70C
Pulsed Drain Current IDM -11 A Note 6
Total Power Dissipation PD 1.08 W Note 5
Thermal Resistance, Junction to Ambient @TA = +25C RJA 115 C/W Note 5
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Gate Threshold Voltage VGS(th) -1.0 to -2.1 V VDS = VGS, ID = -250A
Input Capacitance Ciss 563 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 48 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 41 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg 5.2 nC VDS = -15V, VGS = -4.5V, ID = -3.8A
Gate-Source Charge Qgs 1.7 nC VDS = -15V, VGS = -10V, ID = -3.8A
Gate-Drain Charge Qgd 1.9 nC VDS = -15V, VGS = -10V, ID = -3.8A
Turn-On Delay Time td(on) 4.8 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Rise Time tr 5.0 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Turn-Off Delay Time td(off) 31 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Fall Time tf 15 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Case Material Molded Plastic, Green Molding Compound
Moisture Sensitivity Level 1 per J-STD-020
Terminals Finish Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Case Type SOT23 (Standard)

Ordering Information

Part Number Compliance Case Packaging
DMP3099L-7 Standard SOT23 (Standard) 3000/Tape & Reel
DMP3099L-13 Standard SOT23 (Standard) 10000/Tape & Reel

Mechanical Data - SOT23 (Standard) Dimensions

Dim Min Max Typ
A 0.90 1.15 1.025
A1 0.00 0.10 0.05
A2 0.85 1.10 0.975
b 0.30 0.51 0.40
c 0.080 0.202 0.11
D 2.80 3.00 2.90
E 2.25 2.55 2.40
E1 1.20 1.40 1.30
e 0.89 1.03 0.915
e1 1.78 2.05 1.83
F 0.40 0.60 0.535
L1 0.45 0.61 0.55
L 0.25 0.55 0.40
a 0 8 --

All Dimensions in mm


2412251054_DIODES-DMP3099L-13_C412516.pdf

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