High Reliability P Channel MOSFET DIODES DMP2035UVT 7 with AEC Q101 Qualification and Fast Switching
Key Attributes
Model Number:
DMP2035UVT-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 P-Channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
2.4nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
23.1nC@4.5V
Mfr. Part #:
DMP2035UVT-7
Package:
TSOT-26
Product Description
Product Overview
The DMP2035UVT is a P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications including DC-DC converters, motor control, and general power management functions. Key features include low input capacitance, low on-resistance, fast switching speed, and ESD protection up to 3kV. It is also Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device), and qualified to AEC-Q101 Standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic, "Green" Molding Compound
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Certifications: Qualified to AEC-Q101 Standards
- ESD Protection: Up to 3kV
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A |
| Gate-Source Voltage | VGSS | 12 | V | |
| Continuous Drain Current (Note 6) @ VGS = -4.5V | ID | -6.0 | A | TA = +25C, Steady State |
| Continuous Drain Current (Note 6) @ VGS = -4.5V | ID | -4.8 | A | TA = +70C, Steady State |
| Continuous Drain Current (Note 6) @ VGS = -2.5V | ID | -5.2 | A | TA = +25C, Steady State |
| Continuous Drain Current (Note 6) @ VGS = -2.5V | ID | -4.1 | A | TA = +70C, Steady State |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | -24 | A | |
| Total Power Dissipation (Note 5) | PD | 1.2 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 106 | C/W | Steady State |
| Total Power Dissipation (Note 6) | PD | 2.0 | W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 65 | C/W | Steady State |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Gate Threshold Voltage | VGS(TH) | -0.4 to -1.5 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance @ VGS = -4.5V | RDS(ON) | 35 | m | ID = -4.0A |
| Static Drain-Source On-Resistance @ VGS = -2.5V | RDS(ON) | 45 | m | ID = -4.0A |
| Static Drain-Source On-Resistance @ VGS = -1.8V | RDS(ON) | 62 | m | ID = -2.0A |
| Input Capacitance | Ciss | 2,400 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 210 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 200 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 23.1 | nC | VDS = -10V, VGS = -4.5V, ID = -4A |
| Case | TSOT26 | |||
| Weight | 0.013 | grams (Approximate) | ||
| Packaging | 3,000/Tape & Reel | Part Number: DMP2035UVT-7 | ||
| Packaging | 10,000/Tape & Reel | Part Number: DMP2035UVT-13 |
1808131746_DIODES-DMP2035UVT-7_C260934.pdf
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