power management solution featuring DIODES DMN2990UFZ-7B 20V N-channel enhancement mode MOSFET with low RDSON
Key Attributes
Model Number:
DMN2990UFZ-7B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
250mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@1.5V,10mA
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.6pF
Number:
1 N-channel
Output Capacitance(Coss):
8pF
Input Capacitance(Ciss):
55.2pF
Pd - Power Dissipation:
320mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
DMN2990UFZ-7B
Package:
X2-DFN0606-3
Product Description
Product Overview
The Diodes Incorporated DMN2990UFZ is a 20V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It excels in minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for general purpose interfacing switches and power management functions, this MOSFET features a very low gate threshold voltage and ESD protected gate. It is also environmentally compliant, being totally lead-free, fully RoHS compliant, and a halogen and antimony-free Green device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Certifications: Qualified to AEC-Q101 standards
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0
- Terminals Finish: NiPdAu over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | TA = +25C |
| RDS(ON) max @ VGS = 4.5V | RDS(ON) max | 0.99 | TA = +25C | |
| ID max @ TA = +25C | ID max | 250 | mA | TA = +25C |
| RDS(ON) max @ VGS = 2.5V | RDS(ON) max | 1.2 | TA = +25C | |
| ID max @ VGS = 2.5V | ID max | 230 | mA | TA = +25C |
| RDS(ON) max @ VGS = 1.8V | RDS(ON) max | 1.8 | TA = +25C | |
| ID max @ VGS = 1.8V | ID max | 180 | mA | TA = +25C |
| RDS(ON) max @ VGS = 1.5V | RDS(ON) max | 2.4 | TA = +25C | |
| ID max @ VGS = 1.5V | ID max | 150 | mA | TA = +25C |
| Mechanical Data | ||||
| Case | Case | X2-DFN0606-3 | ||
| Package Footprint | 0.62mm x 0.62mm | |||
| Package Height | 0.42mm Maximum | |||
| Weight | 0.001 grams (Approximate) | |||
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| DMN2990UFZ-7B | X2-DFN0606-3 | 10K/Tape & Reel | ||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 20 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 8 | V | @TA = +25C |
| Continuous Drain Current (Note 5) | ID | 250 / 170 | mA | VGS = 4.5V, Steady State, TA = +25C / +85C |
| Pulsed Drain Current (Note 6) | IDM | 800 | mA | @TA = +25C |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5) | PD | 320 | mW | Steady state @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 402 | C/W | Steady state @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 100 nA | VDS = 16V, VGS = 0V @TC = +25C | |
| Gate-Source Leakage | IGSS | 100 nA | VGS = 5V, VDS = 0V | |
| Gate Threshold Voltage | VGS(th) | 0.4 1.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 0.60 0.99 | VGS = 4.5V, ID = 100mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.75 1.2 | VGS = 2.5V, ID = 50mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.90 1.8 | VGS = 1.8V, ID = 20mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.2 2.4 | VGS = 1.5V, ID = 10mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.0 | VGS = 1.2V, ID = 1mA | |
| Forward Transfer Admittance | |Yfs| | 180 | mS | VDS = 10V, ID = 400mA |
| Diode Forward Voltage | VSD | 0.6 1.0 | V | VGS = 0V, IS = 150mA |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 28.2 55.2 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 4.0 8.0 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 2.8 5.6 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 0.5 1.0 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Gate-Source Charge | Qgs | 0.07 0.14 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Gate-Drain Charge | Qgd | 0.07 0.14 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Turn-On Delay Time | tD(on) | 3.5 10 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-On Rise Time | tr | 2.1 10 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-Off Delay Time | tD(off) | 22 35 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-Off Fall Time | tf | 7.7 15 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
1804140052_DIODES-DMN2990UFZ-7B_C155298.pdf
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