Dual P channel MOSFET Diodes BSS84DWQ 7 with low gate threshold voltage and matte tin finish plating
Key Attributes
Model Number:
BSS84DWQ-7
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V,0.100A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 P-Channel
Input Capacitance(Ciss):
45pF
Pd - Power Dissipation:
300mW
Mfr. Part #:
BSS84DWQ-7
Package:
SOT-363
Product Description
Product Overview
The Diodes Incorporated BSS84DWQ is a dual P-channel enhancement mode MOSFET designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified and PPAP capable, making it ideal for general-purpose interfacing switches, power management functions, and analog switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed. This device is also environmentally friendly, being totally lead-free, fully RoHS compliant, and halogen/antimony-free ("Green" device).
Product Attributes
- Brand: Diodes Incorporated
- Product Family: BSS84DWQ
- Certifications: AEC-Q101 Qualified, PPAP Capable, IATF 16949 Certified Facilities
- Compliance: Totally Lead-Free, Fully RoHS Compliant (EU Directive 2002/95/EC, 2011/65/EU, 2015/863/EU), Halogen and Antimony Free ("Green" Device)
- Case Material: Molded Plastic, "Green" Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -50 | V | VGS = 0V, ID = -250A |
| On-Resistance Max | RDS(on) | 10 | VGS = -5V, ID = -0.1A | |
| Drain Current Max | ID | -130 | mA | TA = +25C |
| Gate-Source Voltage | VGSS | 20 | V | Continuous |
| Total Power Dissipation | PD | 300 | mW | Note 6 |
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W | Note 6 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Gate Threshold Voltage | VGS(th) | -0.8 to -2.0 | V | VDS = VGS, ID = -1mA |
| Input Capacitance | Ciss | 45 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 25 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 12 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | 10 | ns | VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V |
| Turn-Off Delay Time | tD(OFF) | 18 | ns | VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V |
| Weight | 0.006 | grams (Approximate) | ||
| Package | SOT363 | |||
| Ordering Information | BSS84DWQ-7 | SOT363 | 3,000/Tape & Reel | Note 4 |
| Ordering Information | BSS84DWQ-13 | SOT363 | 10,000/Tape & Reel | Note 4 |
2412251057_DIODES-BSS84DWQ-7_C460014.pdf
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